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Articles by author: Ulrich Kaufmann

• Charactrization of Residual Transition Metal Ions in GaN and AIN
  Published in: Defects in Semiconductors 18 (p55)
• Determination of the FR3 Acceptor Level by Direct Excitation of the FR3 EPR in Undoped Semiinsulating GaAs
  Published in: Defects in Semiconductors 15 (p785)
• Electron Paramagnetic Resonance of the Shallow Si Donor in Indirect GaAs/Al_xGa_1-xAs Heterostructures
  Published in: Shallow Impurities in Semiconductors IV (p397)
• EPR Observation of a Deep Center with A p¹ Electron Configuration in GaAs
  Published in: Defects in Semiconductors 16 (p959)
• Group-V Antisite Defects, V_Ga , in GaAs
  Published in: Defects in Semiconductors 17 (p201)
• Infrared Investigations of Persistent Carriers, Photo-Generated during EL2 Bleaching in GaAs
  Published in: Defects in Semiconductors 14 (p359)
• Iron Acceptors in Gallium Nitride (GaN)
  Published in: Defects in Semiconductors 17 (p93)
• Magnetic Circular Dichroism Investigation of the Neutral and the Ionized Manganese Acceptor in GaAs
  Published in: Defects in Semiconductors 15 (p797)
• Magnetic Resonance of X-Point Shallow Donors in AlSb:Te Bulk Crystals and AlSb MBE Layers
  Published in: Defects in Semiconductors 16 (p793)
• ODMR Studies of MOVPE-Grown GaN Epitaxial Layers
  Published in: Defects in Semiconductors 17 (p87)