HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Ulrike Künecke

• Aluminum P-Type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum
  Published in: Silicon Carbide and Related Materials 2007 (p19)
• Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC
  Published in: Silicon Carbide and Related Materials 2005 (p79)
• Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
  Published in: Silicon Carbide and Related Materials - 2002 (p337)
• Germanium Incorporation during PVT Bulk Growth of Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2008 (p11)
• High Al-Doping of SiC Using a Modified PVT (M-PVT) Growth Set-Up
  Published in: Silicon Carbide and Related Materials 2004 (p31)
• Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p333)
• Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions
  Published in: Silicon Carbide and Related Materials 2004 (p25)
• Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method
  Published in: Silicon Carbide and Related Materials 2005 (p633)
• Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder Source
  Published in: Silicon Carbide and Related Materials 2003 (p719)