HomeV.B. Neimash

Papers by Author: V.B. Neimash

Paper TitlePage

On the Effect of Lead on Irradiation Induced Defects in Silicon

Authors: Marie-Laure David, Eddy Simoen, Cor Claeys, V.B. Neimash, M. Kras'ko, A. Kraitchinskii, V. Voytovych, A. Kabaldin, Jean François Barbot

Abstract: Different group IV impurities (Pb, C, and Sn) have been introduced in the melt during the growth of n-type Czochralski silicon. The samples have been irradiated with 1 MeV electrons to a fluence of 4x1015cm-2. The irradiation-induced defects have been studied by Deep Level Transient Spectroscopy (DLTS). It is shown that the formation of one of the irradiation-induced deep level is avoided by the Pb-doping. This level is located at 0.37 eV from the conduction band edge (EC) and shows an apparent capture cross-section of 7x10-15cm2. In addition, another irradiation induced deep level located at EC - 0.32 eV has been studied in more details.

373

A Deep Level Study of High-Temperature Electron-Irradiated n-Type Cz Silicon

Authors: Eddy Simoen, Cor Claeys, V.B. Neimash, A. Kraitchinskii, M. Kras'ko, V. Tischenko, V. Voitovych

367

Radiation Defects and Carrier Lifetime in Tin-Doped n-Type Silicon

Authors: Eddy Simoen, Cor Claeys, A. Kraitchinskii, M. Kras'ko, V.B. Neimash, L.I. Shpinar

425

The Nature of Precursors for the Thermal Donor Formation in Silicon

Authors: V.B. Neimash, O.O. Puzenko, O.M. Kabaldin, A. Kraitchinskii, M. Kras'ko, Cor Claeys, Eddy Simoen

351

Intrinsic Gettering of Radiation Defects in Silicon Caused by High-Temperature Oxygen-Containing Defects

Authors: V.B. Neimash, T.R. Sagan, V.M. Tsmots, V.M. Siratskii, V.I. Shakhovtsov, V.L. Shindich

Peculiarities of Behavior of Irradiated Heat-Treated Si

Authors: V.B. Neimash, V.M. Siratsky, Mikhail G. Sosnin, V.M. Tsmots, V.I. Shakhovtsov, V.L. Shindich, M.G. Mil'vidskii

165