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Articles by author: V.I. Vdovin

• Comparative Analysis of Light Emitting Properties of Si: Er and Ge/Si_1-xGe_x Epitaxial Structures Obtained by MBE Method
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p377)
• Investigations of 2D Hole Gas in Strained Ge-Ge_1-xSi_x Superlattices
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p469)
• Mechanisms of Dislocation Generation in Heterostructures Based on SiGe Alloys
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p497)
• Peculiarities of Defect Formation in SiGe/Si and SiGe/Ge Heterostructures
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p345)
• The Origin and Efficiency of Dislocation Luminescence in Si and its Possible Application in Optoelectronics
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p23)