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Papers by Author: V. Lauer

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Spectroscopic Investigation of Vanadium Acceptor Level in 4H and 6H-SiC

Authors: V. Lauer, G. Brémond, A. Souifi, Gérard Guillot, K. Chourou, Roland Madar, B. Clerjaud

635

High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC

Authors: S.T. Sheppard, V. Lauer, W. Wondrak, E. Niemann

1077

Enlargement of SiC Crystals: Defect Formation at the Interfaces

Authors: Mikhail Anikin, Michel Pons, K. Chourou, O. Chaix-Pluchery, Jean Marie Bluet, V. Lauer, R. Pons

Experimental Investigation of 4H-SiC Bulk Crystal Growth

Authors: K. Chourou, Mikhail Anikin, Jean Marie Bluet, V. Lauer, Gérard Guillot, Jean Camassel, Sandrine Juillaguet, O. Chaix-Pluchery, Michel Pons, R. Pons