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Articles by author: Valentin V. Emtsev

• "New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p181)
• An Effect of the Beam Current and Energy of Fast Electrons on the Production Rates of A-Centres and Divacancies in n-Si
  Published in: Defects in Semiconductors 16 (p321)
• Atomic Environment of Positrons Annihilating in HT Cz-Si Crystal
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p615)
• Configuration of DV Complexes In Ge: Positron Probing of Ion Cores
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p89)
• Defect Production and Annealing in Degenerate Silicon Irradiated with fast Electrons at Low Temperatures
  Published in: Defects in Semiconductors 18 (p151)
• Defect Production in Si:Ge Irradiated by Gamma-Rays at 4.2K, 78K and 300K
  Published in: Defects in Semiconductors I (p311)
• Direct Experimental Comparison of the Effects of Electron Irradiation on the Charge Carrier Removal Rate in n-Type Silicon and Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2004 (p385)
• Donor Centers in Er-Implanted Silicon
  Published in: Defects in Semiconductors 19 (p1515)
• Electrically Active Centers in Silicon Doped with Erbium
  Published in: Defects in Semiconductors 18 (p615)
• Electron Mobility in Moderately Doped Si_1-xGe_x
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p31)
• Electron Traps in Undoped GaN Layers Subjected to Gamma-Irradiation and Annealing
  Published in: Silicon Carbide and Related Materials 2000 (p799)
• Electronic Properties and Thermal Stability of Defects Induced by MeV Electron/Ion Irradiations in Unstrained Germanium and SiGe Alloys
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p253)
• EPR/ENDOR Investigation on the Nature of Heat Treatment Centers in Silicon
  Published in: Defects in Semiconductors 17 (p141)
• Fast Neutron Transmutation Reactions in Si - A New Way of Introduction of Mg-Related Centers
  Published in: Defects in Semiconductors 17 (p129)
• Frenkel Pairs and Impurity-Defect Interactions in p-Type Silicon Irradiated with Fast Electrons and Gamma-Rays at Low Temperatures
  Published in: Defects in Semiconductors 19 (p575)