Papers by Author: Yong Mei

Abstract: pressure sensor, CrSi resistor networks, temperature compensation. Abstract. In this paper, focused on especial requirement monolithic integrated resistance pressure sensor, pressure structure, signal processing circuits and process compatible technology of sensor and IC were studied. The feebleness pressure signal monitoring circuits was designed, high precision CrSi resistor networks was used for temperature compensation of resistance pressure sensor, and a monolithic integrated pressure sensor only 2.3×2.3mm2 was obtained. The measuring results are as follows, measurement range is 5-115kPa, the maximum Vout is more than 4.5V, sensitivity is 1.2%.

Abstract: Aiming at the severe effect of poly-silicon deposition process on the performance of semiconductor bridge, experiments were made on optimization of poly-silicon deposition to obtain optimal process conditions. Resistance of the poly-silicon semiconductor bridge was stabilized 1±0.07Ω, satisfying its application requirements.