Papers by Author: Young Min Kim

Abstract: Transformation of uniformly strained GexSi1-x layers into GeSi dots of 3 ~ 7 nm which are compositionally ordered by one or concurrently two sets of {111} planes was carried out for the first time under non-equilibrium conditions induced by 1.25 MeV electron irradiation at Tc ≥ 200 oC in the high voltage electron microscope (JEM-ARM1300S). This microscope installed in the KBSI is characterized by an excellent point-to-point resolution of 0.12 nm allowing obtaining detailed information on chemical ordering at specific parameters of defocus (-800 Å) and crystal thickness (200~250 Å) determined by extensive HRTEM image simulation for the ordered dots.

Abstract: We demonstrated a nonvolatile memory fabricated with the sandwich device structure of Al/Au nano-crystals embedded in the PVK/Al. The bi-stable conduction switching characteristic (Ion/Ioff ratio) was >1x102, depending on Au nano-crystal size. The size and distribution of Au nano-crystals were determined by the inserted Au-layer thickness between PVK layers. The size of Au nano-crystals increased with the inserted Au-layer thickness. The uniform distribution of isolated Au nano-crystals was obtained with 5 nm of the inserted Au-layer thickness.