Papers by Author: Yu Qing Xiong

Abstract: In this paper, feasibility of aluminium deposition on inner wall of pipes by atomic layer deposition was studied. Firstly, by solving kinetics equation of gas adsorption on the pipe inner wall, the time for the reactant to reach saturated adsorption on the wall was calculated. Secondly, according to the aluminium crystal structure, the thickness of each deposition cycle was obtained. Finally, the minimum aluminium thickness and number of atomic layer deposition cycles that can meet electromagnetic requirement of wave guide was calculated.

Abstract: The dual-step dual-team holographic method to fabricate square lattices is proposed. The effect of intensity threshold was analyzed by calculating the intensity spatial distribution. The photonic band gap properties of two-dimensional square lattice fabricated by holographic lithography are investigated numerically. The influences of intensity threshold and dielectric contrast on photonic gap are comprehensively studied by plane wave expansion method. Calculations of band structure as a function of the intensity threshold show that the full photonic band gap does not increase monotonically with dielectric contrast ratio, but has a peak value instead by studying the relation between the complete PBG and the dielectric contrast.

Abstract: The effect of intensity threshold on the filling ratio was analyzed by calculating the intensity spatial distribution. The photonic band gap properties of two-dimensional triangular lattice fabricated by holographic lithography are investigated numerically. The influences of intensity threshold and dielectric contrast, on photonic gap are comprehensively studied by plane wave expansion method. Calculations of band structure as a function of the intensity threshold show that the PBG of positive structure opens for TM and TE polarization separate, and the negative structure has the complete PBG. The complete PBG does not increase monotonically with dielectric contrast ratio, but has a peak value instead by studying the relation between the complete PBG and the dielectric contrast ratio. The optimal dielectric contrast is 22 when intensity threshold is 0.2.

Abstract: TiO₂ films were fabricated on Si substrate by using electron-beam gun evaporation. Influence of deposition rate, deposition temperature and ion beam bombarding on stress in TiO₂ films was studied by AFM and XRD. The results show that deposition temperature of 423K and deposition rate of 0.2nm/s, the average stress in titanium oxide thin films is less than 48.2MPa. The average stress decreases to compressive stress of 16.7MPa from tensile stress of 72.9MPa by the ion beam energy of 113eV and bombarding time of 300s. The microstructure change of TiO₂ films is main factors of stress development.