Papers by Author: Zhen Hong Jia

Abstract: A novel immunosensor based on porous silicon (PSi) for antigen detection was reported in this paper. The antigen (SpaA) and the specificity of the antibodies are employed as the target and the probe in our laboratory, respectively. The immunosensor structure was prepared using bioconjungation. After the antigen-antibody reaction, the red shift of the reflection spectrum of the immunosensor increases in proportion to the concentration of SpaA. The sensitivity of this immunosensor is 41nm/ µg•ml-1 and the detection limit is 2.44×102pg•ml-1, they are better compared with our previous work by using this method. Controlled experiments were also presented with non-immune antibody and the results show that this immunosensor possesses high specificity.

Abstract: We have investigated the morphology and photoluminescence (PL) of Zinc Oxide (ZnO) and Zinc sulphide (ZnS) compound grown on porous silicon at room temperature. Under different excitation wavelengths (320 nm, 340nm, 370 nm), the photoluminescence (PL) spectra of PS-ZnS-ZnO composites were different, and at 550nm there is a strong photoluminescence peak. Energy dispersive spectroscopy (EDS) has been carried out to evaluate the existing of ZnO/ZnS compound. In addition, the scanning electron microscopy (SEM) observation shows that the morphology of the PS-ZnS-ZnO composites was well grown on porous silicon.

Abstract: We report the structural and photoluminescence properties of CdTe/Porous silicon (PS) composite system prepared by chemical vapor deposition. The XRD pattern accord with the standard pattern of cadmium telluride of the samples was evaluated and the morphology of CdTe particles was characterized by scanning electron microscopy. The composite sample gives a strong luminescence and the mechanism of photoluminescence with CdTe/PS has also been discussed.

Abstract: We have measured photoluminescence of porous silicon which is electrochemically prepared on single crystal silicon wafer with co-implantation of Ar+ and N+ ions. The results show that the photoluminescence intensity of porous structure of co-implanted silicon was enhanced that we attribute these to the enhanced formation of porous silicon microstructure induced by ion implantation and from the analysis by scanning electron microscopy, it is demonstrated that the different density of the pores with different doses ion implantation