Papers by Author: Zheng Xin Tang

Abstract: The researches of non-oriented silicon steel are mainly focused on the effect of main processing parameters on the microstructure and magnetic properties, but there have been few studied about its flow stress until now. In this paper, the hot deformation of non-oriented silicon steel 50A1300 is studied by thermal-mechanical simulation method. The hot deformation behavior of the steel is explored and the flow stress prediction of the steel is established based on a kind of BPA ANN. A piecewise method is proposed in this paper, and the prediction with this new method has good accuracy.

Abstract: Based on Jonscher power law, frequency dependence of ac conductivity of 40Fe2O3–60P2O5 glasses were investigated in a relatively high temperature range. Results indicated the power law exponent first decreases with increasing temperature, reached a minimum at a certain temperature and then in- creases again. Preliminary theoretical explanations and predictions for this phenomenon were presented.

Abstract: Performing ab-initio total-energy calculations to investigate the adsorption and diffusion processes of the Au atoms with both the clean Si(001)-(1×1) and H-terminated Si(001)-(2×1) surfaces. It was found that, on the clean Si(001)-(1×1) surface, the most stable adsorption sites for Au atoms are middle part of four Si atoms, while on H-terminated Si(001)-(2×1) surface, the most stable sites are the middle part of a Si-Si dimer. The result showed that surface hydrogenation make most stable site transfer and affect the adsorption of Au on Si(001) surface.

Abstract: The electrical properties of 10M2O-36Fe2O3-54P2O5 (M=Li, Na and K) glasses were studied in the temperature range from 323 to 573 K. Non-linear Arrhenius behavior was observed for all the samples examined. It was shown that in both high- and low-temperature ranges, the replacement of Li, Na and K would result in decreases in both the dc conductivity and the activation energy. Analysis of the relationship of the parameters included in the Arrhenius equation, activation energy and the pre- exponential factor for each sample, preliminary explanations for these experimental phenomena have been presented.

Abstract: SiC films were prepared by HFCVD technique on (111) Si substrate. The composition and the structure of the films were investigated using EDX, XRD and transient fluorescence. Results indicated the films deposited were nanocrystalline and the calculation of the grain size gave a further confirmation. PL measurement of the present films showed that there existed a strong ultraviolet emission at room temperature.