Papers by Keyword: Aluminum Doping

Abstract: Al doping into 4H-SiC performed by irradiating pulse-width-expanded excimer laser to an Al film deposited on the 4H-SiC surface is investigated. An optical pulse stretcher was constructed to produce the laser pulse whose peak intensity was reduced as half as that of the original pulse and pulse width was expanded from 55 ns to 100 ns. The irradiation of the expanded pulses is found to reduce the ablation of the materials from the surface and enable irradiation of multiple shots. As the result, doping depth of Al is significantly increased. The multiple shots of the expanded pulses is also fund to decrease the sensitivity to spatial non-uniformity of laser intensity and increase the uniformity of doped region.

Abstract: A series of aluminium doped (from 2×10¹⁶ to 8×10¹⁹ cm^-3) 4H-SiC epitaxial layers were mainly studied by Low Temperature Photoluminescence and time-resolved optical pump-probe techniques to determine the concentration of aluminium, its activation ratio, the doping related carrier lifetime, hole mobility and excess carrier diffusion length.

Abstract: In this work, we focus on heavily aluminum (Al) doped 4H-SiC samples. We compare the effect of the Al concentration and Hall carrier concentration on the Raman spectra in a large frequency range. The Al concentration measured by Secondary Ion Mass Spectrometry ranged from 2×10¹⁶ to 8.4×10¹⁹ cm^-3 while the electrical measurement give a carrier concentration up to 5×10¹⁹ Al×cm^-3. On the Raman spectra, three different frequency domains have been analysed: i) at high frequency where we consider the change in longitudinal optical phonon-plasmon coupled mode; ii°) at low frequency where we consider the continuum of electronic transitions and iii°) finally, considering the Fano interference effect between the continuum of electronic transitions and the Folded Transverse Acoustic phonon modes. This analysis is applied to comment a Raman spectra mapping collected on a 4H-SiC 2 inch wafer.

Abstract: We have investigated Raman spectra of p-type 4H-SiC crystals with hole concentration ranging from 3×10¹⁶ to 1×10²¹ cm^-3. For folded transverse acoustic (FTA) doublet modes, Fano interference profiles were analyzed, and the frequency shift due to Fano interference was obtained as a function of hole concentration. We demonstrated that the shift of the FTA doublet modes is a quantitative measure for evaluating of hole concentration of p-type 4H-SiC. Spectral features of transverse optical (TO) and longitudinal optical phonon-plasmon coupled (LOPC) modes were also studied for various carrier concentrations. The results show that the full width at half maximum of the LOPC and relative intensity of TO and the LOPC can be used as other calibration measures for hole concentration.

Abstract: We report on topographical, structural and electrical measurements of aluminum-implanted and annealed 4H-SiC epitaxial samples. The influence of heating-up and cooling-down temperature rates on the SiC surface roughness, the crystal volume reordering and the dopant electrical activation was particularly studied. A higher heating-rate was found to preserve the rms roughness for annealing temperatures lower than 1700°C, and to improve the sheet resistance whatever the annealing temperature due to a better dopant activation (except for 1600°C process, which induced a dark zone in the sample volume). A complete activation was calculated for an annealing at 1700°C during 30 minutes, with a ramp-up at 20°C/s. Rising the cooling-down rate appeared to increase the sheet resistance, probably due to a higher concentration of point defects in the implanted layer.

Abstract: Low-temperature halo-carbon homoepitaxial growth is suitable for selective epitaxial growth of 4H-SiC using SiO2 mask. A possibility of achieving high values of doping in combination with the selective growth makes it an alternative to ion implantation for selective doping in SiC. In this work, TMA doping in situ during a blanket low-temperature epitaxial growth was utilized to produce heavily Al doped SiC layers for Ohmic contact formation to p-type SiC. Nearly featureless epilayer morphology with Al atomic concentration exceeding 3x1020 cm-3 was obtained after growth at 13000C with the growth rate of 1.5 µm/hr. Ni TLM contacts with a thin adhesion layer of Ti were formed. The as-deposited metal contacts were almost completely Ohmic even before annealing. The specific contact resistance of 2x10-2 Ohm-cm2 and 6x10-5 Ohms-cm2 was achieved without and with contact annealing respectively. The resistivity of the epitaxial layers better than 0.01 Ohm cm was measured for Al atomic concentration of 2.7x1020 cm-3.