Papers by Keyword: Auger

Abstract: TiO2 nanocoated mild steel surface has been successfully prepared via 100 watt of RF magnetron sputtering by using TiO2 target and sputtering condition was performed in 80sccm argon gas. The studied was done in comparing the surface properties of TiO2 nanocoated mild steel between short term and long term sputtering time at 5 and 60 minutes, respectively. From the results, we have found that the long-term sputtering time producing good surface coating with lower surface roughness at 0.033 nm with thickness in nanometer scale is 169 nm via AFM. Through Auger study revealed that the coating attributed Ti and O elements at energy of 383.48 eV and 483.44 eV, respectively. It was also showed that the intensity of that element high at about 100k a.u. in long-term compared to 55k a.u. short-term of sputtering time. It is thus showed that producing coating depends upon manipulation of parameter in RF magnetron sputtering.

Abstract: Modern analytical techniques are useful to characterize oxide films and to study oxide growth processes. This paper will summarize some of our work on the high temperature oxidation of both metals and semiconductors. Systems considered include binary III-V semiconductors, e.g. GaAs, which unlike silicon does not normally form high-quality native oxide. For GaAs, the influence of deuterium in the substrate and surface platinum have been evaluated with respect to oxide growth. Both aluminum-containing alloys (FeCrAl and NiAl) and semiconductors (AlGaAs, InAlAs and InAlP) are included. The objective is to produce good quality protective and insulating aluminum-containing oxides. In these studies, the application of several modern surface- analytical techniques, particularly Auger electron spectroscopy, X-ray photoelectron spectroscopy and secondary ion mass spectrometry, complemented by other techniques, e.g. transmission electron microscopy and X-ray analysis provides useful information on the chemical composition of the oxides and leads to a better understanding of oxidation and corrosion phenomena. In the case of AlGaAs and InAlP, thermal oxidation produces aluminum-containing oxides that have good insulating characteristics which makes the oxide films potentially useful for some device applications.

Abstract: In this work we report an analysis on Ni/4H-SiC interfaces aimed at optimizing the ohmic contacts. Several thermal cycles have been performed by rapid thermal annealing checking the possible chemical reactions at the metal semiconductor interfaces. Micro x-ray diffraction and micro Raman techniques have been performed in order to study the interface micro structural evolution. Inter diffusion of each element at the Ni - SiC interface was examined using Auger spectroscopy. Electrical measurements have been performed in order to check the ohmic behavior of the contacts. Finally, a correlation between microstructures evolution and electrical behaviors is reported.