Papers by Keyword: BaTi₂O₅ Film

Abstract: Using the (100)-Oriented MgO Thin Film as the Buffer Layer, BaTi₂O₅ Films Were Deposited on Si(100) Substrates by Pulsed Laser Deposition under Various Oxygen Partial Pressures (P_O2). the Effects of P_O2 on the Crystal Phase, Orientation and Surface Morphology of the as-Deposited Films Were Investigated. Single-Phased Bati2o5 Films Were Obtained at P_O2 = 10-15 Pa, and the Preferred Orientation Changed from (710) to (020) with Decreasing P_O2. at P_O2 = 10 Pa, the BaTi₂O₅ Films with a Higher Degree of bItalic text-Axis Orientation and a Dense Texture Were Deposited on the Mgo(100)/Si(100) Substrates. The MgO Buffers Played an Important Role as Structural Templates for the Textured Growth of BaTi₂O₅ Films on Si Substrates.

Abstract: Barium dititanate (BaTi2O5) films were prepared on MgO (100) substrate by pulsed laser deposition under various laser energy densities. The effect of laser energy on crystallinity, orientation and surface morphology was investigated. The preferred orientation of the as-deposited films changes from (710) to (020) with decreasing laser energy, and the surface morphology is different depending on laser energy too. The b-axis oriented BaTi2O5 film could be obtained at the laser energy density of 2J/cm2, where the film shows a dense surface with an elongated granular texture.

Abstract: BaTi2O5 film was prepared on MgO (100) substrate by laser ablation, and the structure and electric property of the film were investigated. The film was b-axis oriented and epitaxially grown on the substrate along two in-plane directions with the a-axes ([100]-orientation) perpendicular to each other. The b-axis oriented BaTi2O5 film exhibited a sharp permittivity maximum (~ 2000) and had a high Curie temperature (750 K). The electrical conductivity increased with temperature and showed the Arrhenius relationship having an activation energy of 1.25 eV.

Abstract: A new lead-free ferroelectric BaTi2O5 film was first prepared by laser ablation. BaTi2O5 films in a single phase were obtained at substrate temperatures (Tsub) from 900 to 1050 K and oxygen partial pressures (PO2) from vacuum (10-6 Pa) to 30 Pa. The films exhibited a (710) and/or (020) preferred orientation, depending on Tsub and PO2. At PO2 = 12.5 Pa and Tsub = 950 - 1000 K, the BaTi2O5 film was b-axis oriented and epitaxially grown on MgO (100) substrate with a rectangularly crossed texture. The epitaxial growth relationship between the film and the substrate were BaTi2O5 (020) [100] // MgO (100) [001] and BaTi2O5 (020) [100] // MgO (100) [010].