Papers by Keyword: Biaxial Strain

Abstract: First-principles calculations are used within the framework of density functional theory to investigate the electronic, structural, magnetic and optical properties of Potassium Nitride (KN) in the bulk and monolayer states. This compound is dynamically stable according to phonon calculations. The results show that the energy gap decreases from the bulk to the monolayer. The equilibrium lattice constant increases when changing from bulk to monolayer, and the half-metallic (HM) character remains preserved in that case. According to the Slater–Pauling statute (Zt-4), the total magnetic moment equals 2 µ_B per unit cell. The electric field and biaxial strain affect the monolayer's electronic and magnetic characteristics were investigated. The magnitude of the spin-up channel concerning the energy gap changes under the biaxial strain. In particular, it decreases under tensile strain and increases under compression strain. Given that the values of magnetic moments remain unchanged, the HM property can be preserved for significant strains. When the electric field reaches -0.6 V/nm, the half-metallic property of this compound will be destroyed. It affects the energy gap and eliminates the HM trait since the magnetic moment of the K grew significantly greater than the moment of the N, and the N played a significant role in the realization of the half-metallic characteristic.

Abstract: The effect of biaxial and uniaxial strains on the electronic structure of anatase is studied using Density Functional Theory (DFT) calculation with ultrasoft pseudopotential and a generalized gradient approximation (GGA) Perdew-Burke Ernzerhof (PBE) exchange-correlation. The lattice constant is optimized using the Birch-Murnaghan equation of states (BM-EOS) to get an optimized geometric structure of anatase TiO₂. We apply biaxial and uniaxial strains to this optimized structure up to 16% and find that the applied strains change the band gap energy compared to a pure anatase with a different band gap energy up to 1.61 eV for biaxial strain and 0.35 eV for uniaxial strain. The biaxial strains increase gap energies except at +16% tensile strain, decreasing the gap energy to 0.04 eV. Uniaxial strains tend to increase as the strains increase except at-12 and-16%; their gap energy differences are 0.08 and 0.20 eV, respectively, smaller than that of the zero strain. The results also show that the applied 16% tensile strain significantly lengthens the atomic bonds; thus, we conclude that the maximum strain applied to anatase TiO₂ is 16%.

Abstract: We perform the density functional theory calculations (DFT) to study the effect of biaxial strain on the band structures of monolayer GaN. We apply compressive and tensile strains up to 10%. There is no change of bandgap for the applied tensile strains below 8%. The compressive strains have a constant bandgap which is slightly smaller than that of the zero strain. We find that the applied tensile strain above 8% affects its electronic structure and decreases its bandgap energy by about 0.05 eV while the compressive strain above 4% decreases its bandgap about 0.22 eV.