Papers by Keyword: Bimolecular Recombination

Abstract: We applied time-resolved free carrier absorption (FCA) to monitor non-equilibrium carrier dynamics in 4H epilayers and 3C SiC bulk crystals at excess carrier densities in the N = 1017 - 1019 cm-3 range. The numerical fitting of FCA decay kinetics provided the linear and nonlinear carrier recombination rates in the 40-390 K range and the absorption cross-sections eh at 1064 nm. In 4H, the decrease of the bulk lifetime (800 ns) with excitation provided the bimolecular and Auger coefficients B=(1.2±0.4)×10-12 cm3/s and C=(7±4)×10-31cm6/s, respectively, at room temperature. These values for 3C were 55-150 ns, (2.0±0.4)×10-12 cm3/s, and (2±1)×10-32 cm6/s, respectively. The rate of linear and nonlinear recombination increased at lower temperatures. A value of eh =4.4×10-18 cm2 for 3C SiC at 1.064 m was found 2.3 times smaller than that for 4H SiC.

Abstract: A new model is developed for the Staebler-Wronski effect (SWE) in intrinsic a-Si:H. In this model, non-radiative recombination of the photogenerated carriers occurs at a weak bond close to a SiHHSi configuration, which allows a local creation of defect of the SiHD type. This defect can be annihilated by mobile hydrogen atom that has been emitted from an other distant SiHD defect as a result of non-radiative recombination at this defect site. In this study we have considered illumination intensities in the moderate and intense illumination range. In both cases, the proposed model reproduces many experimental features of the SWE known in the literature.