Papers by Keyword: Bismuth Layer Structured Ferroelectrics

Abstract: Na0.5Bi4.5Ti4O15-based materials with A-site vacancy were synthesized using conventional solid state processing. The (Li,Ce) modification of Na0.5Bi4.5Ti4O15-based materials resulted in the obvious improvement of the piezoelectric activity and dielectric permittivity. The dielectric and piezoelectric properties of Na0.5Bi4.5Ti4O15-based ceramics exhibiting a very stable temperature behavior, together with its high TC ~641oC, excellent piezoelectric coefficient ~28pC/N and very low temperature coefficient of resonant frequency, making the (Li,Ce) modified Na0.5Bi4.5Ti4O15-based ceramics a promising candidate for high temperature applications.

Abstract: Ceramic materials based on lead titanate, lead niobate and bismuth layer-structured ferroelectrics (BLSF) were studied to develop piezoelectric ceramics for high temperature sensor applications. Compositional modification enabled lead titanate and lead niobate type ceramics to exhibit good piezoelectric properties at 500°C . The Curie temperature for one BLSF, CaBi4Ti4O15 was close to 800°C, though the piezoelectric constant was smaller than those of lead titanate and lead niobate ceramics. These ceramics seem to be good candidates for use as high temperature sensor materials. In addition, textured SrBi2Nb2O9 (SBN), another BLSF, ceramics with various orientation factors were fabricated through the templated grain growth (TGG) method. The resonant frequency of 76% textured SBN varied linearly with temperature and exhibited stable temperature characteristics. The temperature coefficient of the resonant frequency was –0.85 ppm/°C from –50 to 250°C, and was smaller than that of a quartz oscillator. Therefore, textured SBN ceramics are suitable for use as a resonator material when stable resonant frequency is needed in a high temperature range.

Abstract: Superlattice-structured Bi4Ti3O12- PbBi4Ti4O15 single crystals were grown, and their properties of polarization hysteresis and leakage current along the a axis were investigated. Oxidation annealing led to a marked increase in leakage current, while annealing in N2 atmosphere yielded a marked decrease in leakage current at room temperature. These results show that electron hole is the dominant carrier for the leakage current. A well-saturated polarization hysteresis with a remanent polarization of 41 μC/cm2 was observed, which is suggested to originate from the peculiar ferroelectric displacement of Bi in the Bi2O2 layers.

Abstract: Magnetic-field-assisted electrophoretic deposition (B-assisted EPD) method has been applied for synthesizing a(b)-axis-oriented Bi5FeTi3O15 ceramics, and the effects of the B-assisted EPD on grain orientation and microstructures have been investigated. The sintering at 1100oC of the green compact obtained by the B-assisted EPD led to dense ceramics with a high relative sintered density of 98%. X-ray diffraction analysis shows that the a(b)-axis-orientation degree of the grain oriented ceramics evaluated by the Lotgering method was 45 %.

Abstract: Vanadium-substituted strontium bismuth niobate, SrBi2Nb2-xVxO9 (SBNVx), ceramics were synthesized by a low-temperature ceramic fabrication process; their electric properties were characterized, and grain orientation effects on their electric properties were also investigated using a hot-forging (HF) method. Resonance characteristics of the (33) and (15) modes of grain-oriented SBNV0.1 (HF) showed relatively high electromechanical coupling factors of k33=0.272 and k15=0.151 as well as piezoelectric constants of d33=31.7 pC/N and d15=24.8 pC/N. The temperature dependences of the resonance frequency (TC-f) of the (33) and (15) modes of the SBNV0.1(HF) ceramics were -16.5 ppm/°C and –25.5 ppm/°C, respectively.

Abstract: A study has been done for the piezoelectric properties in texured ceramics of SrBi2Nb2O9 (SBN) fabricated by the templated grain growth (TGG) method. Remanent polarization along to the stacking direction increased with the orientation degrees. That corresponds to the increases in electro-mechanical coupling coefficient with orientation degree. The temperature coefficient of the resonant frequency (TCF) in thickness sheer vibration mode changed from negative to positive with increasing orientation degrees, and an excellent TCF of -0.4 ppm/°C was obtained for the specimen with an orientation degree of 76%.

Abstract: Pr-substituted Bi4Ti3O12 (BPT, Bi4-xPrxTi3O12, x=0.1-0.4) polycrystalline thick films with a-/b-axes orientations and thickness of 2-3 μm were grown on sputter-grown IrO2 layers by chemical solution deposition method for developing lead-free piezoelectric film microdevices. Electric-field-induced strains measurements were performed by double-beam laser displacement meter and longitudinal strain of e=0.25 % under 400 kV/cm and piezoelectric coefficient d33=63 pm/V at 10 Hz were observed in BPT thick film of x=0.1 with a-/b-axes mixed orientations. The value of strain closely related to spontaneous polarization and monotonously decreased with increasing x. Microstructures of 3 μm-thick BPT films were fabricated by photolithography and dry etching processes with several tens micrometers in size.

Abstract: Nd-substituted Bi4Ti3O12 (BNT) polycrystalline thin films with preferred a-/b-axes orientations were grown on sputter-grown IrO2(101) layers by chemical solution deposition method. After optimizing the heat treatment conditions, insulating characters and ferroelectric properties in 250-nm-thick BNT thin films with a-/b-axes orientations were investigated at room temperature. Low leakage current density of J=10-7~10-8 A/cm2 at 100 kV/cm and fair value of remnant polarization (2Pr=31 μC/cm2 at 400 kV/cm) were measured even though the Bi2O2 blocking layer aligned parallel to the film normal.

Abstract: The dielectric, ferroelectric and piezoelectric properties of strontium bismuth tantalate niobate, Sr1-xBi2+xTa2-yNbyO9 [SBTN10x(y)] ceramics were investigated. The samples were fabricated by a conventional ceramic fabrication technique. Curie temperature, Tc, increased with an increase in Nb concentration y, and Tc of SBTN2(y) showed two regions with different slopes that divided near y=1.0. The coercive field, Ec, of SBTN2(y) increased with the increase in y and the highest Ec of 90 kV/cm was obtained. SBTN2(0.6) and SBTN2(1.0) showed the highest coupling factor k33 of 0.17 in the SBTN2(x) system.

Abstract: Intergrowth-structured Bi4Ti3O12-BaBi4Ti4O15 (BiT-BBTi) single crystals were grown by a self-flux method, and the crystal structure and polarization properties were investigated. Transmission electron microscope observations and X-ray diffraction analysis presented direct evidence of the intergrowth structure composed of the alternate stacking of BiT and BBTi layers. The BiT-BBTi crystals showed a giant spontaneous polarization (Ps) along the a axis of 52 μC/cm2, which was larger than those of the crystals of BiT (46 μC/cm2) and BBTi (16 μC/cm2). The large Ps of the BiT-BBTi crystals is suggested to originate from the ferroelectric displacements of the Bi of Bi2O2 layers as well as from the Bi substitution for Ba induced by compositional deviation. It was found that the polarization properties of the BiT-BBTi crystals depend strongly on the composition.