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Articles by keyword: «C-V Characteristics»

• A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H₂ and H₂O Vapor Atmosphere Post-Oxidation Annealing
  Published in: Silicon Carbide and Related Materials 2001 (p1057)
• Abnormal Hysteresis Property of SiC Oxide C-V Characteristics
  Published in: Silicon Carbide and Related Materials 2001 (p1021)
• AEM Investigation of Interface Structure of Y₂O₃-Ta₂O₅ Co-Doped Zirconia Buffer Layer
  Published in: Electroceramics in Japan VII (p237)
• Characterization of Dielectric Properties of Alkoxy-Derived (Y,Yb)MnO₃ Ferroelectrics /HfO₂ Stacking Layers
  Published in: Electroceramics in Japan IX (p73)
• Characterization of Dielectric Properties of Alkoxy-Derived (Y,Yb)MnO₃ Ferroelectrics/Insulator Stacking Layers
  Published in: Electroceramics in Japan VIII (p65)
• Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs
  Published in: Silicon Carbide and Related Materials - 2002 (p661)
• Conduction Properties of Intergranular Phase in SrTiO₃ -Bi₂O₃ Capacitors
  Published in: Intergranular and Interphase Boundaries in Materials (p117)
• Construction of MFIS Structure Using Alkoxy-Derived (Y,Yb)MnO₃ Thin Films
  Published in: Electroceramics in Japan VII (p49)
• Effect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS Structures
  Published in: Silicon Carbide and Related Materials - 1999 (p1283)
• Effects of the Cooling-Off Condition on the Oxidation Process in 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p845)
• Electrical Properties of Grain Boundaries in Ceramic Semiconductors
  Published in: Electrical Properties of Oxide Materials (p317)
• Ferroelectric and Electrical Properties of Potassium Nitrate Thin Composite Layers
  Published in: MEMS, NANO and Smart Systems (p607)
• Fundamental Characteristics of SiC MIS Structure with Al₂O₃ as Gate Dielectric
  Published in: Advanced Materials and Structures (p1079)
• Improvement of C-V Characteristics and Control of Interlayer Growth of Rare Earth Oxide Stabilized Zirconia Epitaxial Gate Dielectrics
  Published in: Electroceramics in Japan VI (p137)
• Improving SiO₂ Grown on P-Type 4H-SiC by NO Annealing
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p869)