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Articles by keyword: «C-V Measurement»

• Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System
  Published in: Silicon Carbide and Related Materials - 2002 (p165)
• DLTS Studies of Al Diffused n-Si
  Published in: Advanced Materials XI (p393)
• Electrochemical C-V Profiling of n-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p681)
• Influence of the Growth Conditions on the Layer Parameters of 4H-SiC Epilayers Grown in a Hot-Wall Reactor
  Published in: Silicon Carbide and Related Materials 2000 (p95)
• Investigation of Electron Traps in SnO₂ Based Varistor Ceramics
  Published in: High-Performance Ceramics V (p517)
• Measurement of the Hall Scattering Factor in 4H SiC Epilayers from 40K to 290K and up to Magnetic Fields of Nine Tesla
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p517)
• Passivation and Depassivation of Electrically Active Centers in the Polysilicon-Oxide-Silicon Structures
  Published in: Passivation of Metals and Semiconductors (p109)
• Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
  Published in: Silicon Carbide and Related Materials 2001 (p921)
• Thermal Stability of Sputtered TiN as Metal Gate on 4H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p805)