Papers by Keyword: Charge Injection

Abstract: The study investigated the effect of iodine-doped pentacene film as a buffer layer in an organic light-emitting diode (OLED). In this study, an ITO (indium tin oxide)-based sample is used as a reference device for comparative purposes. In OLED devices, the buffer layers were deposited using the doping of iodine vapor with the pentacene materials under proper conditions. The thermal treatment of the doped pentacene film results in increasing the conductivity of the buffer layer. Surface morphology for the bilayer anode was carried out by FESEM (Field Emission Scanning Electron Microscope) analysis. In our work, maximum luminance of 2345 cd/m² and current efficiency of 5.4 cd/A are obtained, along with more stability performance under annealing treatment in the device structure of FTO/iodine-doped pentacene (30 nm)/TPD [N, N′-Bis(3-methyl phenyl)-N, N′-diphenylbenzidine] (44 nm)/Alq3 [Tris(8-hydroxyquinoline)aluminum(III)] (52 nm)/LiF (lithium fluoride) (5 nm)/Al (aluminum) (110 nm).

Abstract: A series of silicon (VI) porphyrins compounds with varying meso substitutions Si (TPP)Cl₂ (where X=5,10,15,20-tetraphenylporphyrin), Si (TFP)Cl₂ (X=5,10,15,20-tetrafluorenylporphyrin), Si (TQP)Cl₂(X=5‚10‚15‚20-tetra (2,3,6,7-tetrahydro-1H,5H-benzo [ij] puinolizine) porphyrin),Si (TMP)Cl₂(X=5,10,15,20-tetra (N,N-dimethylphenyl) porphyrin) have been investigated using density functional theory (DFT) to assess the influence of ruffled conformation on the electronic structures, frontier molecular orbital, charge carrier transport, electronic spectra. The electronic structures reveal that all these Si porphyrins display visible ruffling distortion, as the dihedral angle Cα₂-N₂-N₄-Cα₄ are ca. 30 ̊. And calculations confirm that ruffed distortion result in higher LUMO energies, lower EA values than corresponding planed Zn porphyrins, especial for similar λ_hole and λ_electron values. These calculations suggest that the ruffled conformation bring about better charge injection and transport, which would broaden the application of distorted porphyrin in several different fields.

Abstract: The isothermal charging current and the isothermal discharging current in low mobility materials are analyzed either in terms of polarization mechanisms or in terms of charge injection/extraction at the metal-dielectric interface and the conduction current through the dielectric material. We propose to measure the open-circuit isothermal charging and discharging currents just to overpass the difficulties related to the analysis of the conduction mechanisms in dielectric materials. We demonstrate that besides a polarization current there is a current related to charge injection or extraction at the metal-dielectric interface and a reverse current related to the charge trapped into the shallow superficial or near superficial states of the dielectric and which can move at the interface in the opposite way that occurring during injection. Two important parameters can be determined (i) the highest value of the relaxation time for the polarization mechanisms which are involved into the transient current and (ii) the height of the potential barrier W0 at the metal-dielectric interface. The experimental data demonstrate that there is no threshold field for electron injection/extraction at a metal-dielectric interface.

Abstract: We report on the effect of nitridation on the negative and positive charge buildup in SiC gate oxides during carrier injection. We observe that the incorporation of nitrogen at the SiO2/SiC interface can enhance the reliability of the interface by suppressing the generation of interface states upon electron injection but that it can also degrade the oxide by creating additional hole traps. We relate these phenomena to the passivation of atomic-level defects by nitrogen.

Abstract: Implantable neural prostheses form hybrid interfaces with biological constructs, and the application of electrical fields can restore functions of patients with neurological damages. The various stoichiometric compositions of iridium oxide were synthesized using reactive magnetron sputtering. The charge injection behavior of iridium oxide deposited with an O2/Ar ratio of 0.5 was similar to pure Ir. The charge density of iridium oxide increased with increasing O2/Ar ratio, and increasing thickness of iridium oxide.

Abstract: The transient conductivity in low-density polyethylene is studied. Isochronal currentvoltage measurements for 1800 s and 1 day time intervals are carried out under dry N2 atmosphere. When after every measurement the sample is fully discharged at high temperature the isochronal current - voltage characteristic reveals an ohmic behavior. When the next field increase is applied without sample discharging the current-voltage characteristic is super-quadratic. We explain this increase of the current assuming that a fraction of the previous injected charge is detrapped by the field and it contributes to current increase. Consequently the current – voltage characteristic is strongly dependent on the time lag between two successive rises in the field. Neither the Poole-Frenkel mechanism nor the Richardson – Schottky mechanism can by used to explain the experimental results. The isothermal charging and discharging currents are explained assuming the movement of injected/ejected charge in the resultant local field. The values obtained for the adjustable parameters of the model are in good agreement with the values in the literature.