Papers by Keyword: CuIn_1-xGa_xSe₂

Abstract: CuIn1-xGaxSe2 (CIGS) precursor films were fabricated on Mo foils by one-step electrodeposition in water and alcohol solutions. The precursor films were annealed in Ar atmosphere at 450°C to synthesize the polycrystalline thin films. The current density vs. potential curves of Cu2+, In3+, Ga3+ and Se4+ was studied by cyclic voltammetry. The compositions of CIGS, were analyzed by energy dispersive X-ray spectrum. The morphology and phase structure of films was characterized by scanning electron microscopy and X-ray diffraction, respectively.

Abstract: CuIn1-xGaxSe2(CIGS) precursor films are fabricated on Mo foil by coelectrodeposition. The influence of the applied potential and the electrolyte additive in the process of electrodeposition are discussed. The precursor films are annealed in Ar for a short time to synthesize the polycrystalline thin film. The annealed layers are only phase-pure CuIn0.7Ga0.3Se2 and show a good crystallinity.