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Articles by keyword: «Czochralski Silicon»

• A Deep Level Study of High-Temperature Electron-Irradiated n-Type Cz Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p367)
• Annealing Behavior of a Ligth ScatteringTomography Detected Defect near the Surface of Si Wafers
  Published in: Defects in Semiconductors 18 (p1725)
• Annealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p609)
• Annealing of Electron Irradiated P-, As-, Sb- and Bi-Doped Czochralski Silicon
  Published in: Defects in Semiconductors 17 (p1239)
• Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p347)
• Characterization of Radiation Hard Silicon Materials
  Published in: Advanced Materials Science and Technology (p207)
• Comparison of Nickel and Iron Gettering in Cz Silicon Wafers
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p367)
• Defect Engineering in the Development of Advanced Silicon Crystals and Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p111)
• Defects in AS-Grown Silicon and their Evolution During Heat Treatments
  Published in: Defects in Semiconductors 19 (p341)
• DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p547)
• Electron Beam Induced Current Contrast of Oxygen Precipitation Related Defects in Czochralski Silicon
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p237)
• Enhanced Formation of Thermal Donors in Germanium Doped Czochralski Silicon Pretreated by Rapid Thermal Annealing
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p393)
• First Principles Calculation for Point Defect Behavior, Oxygen Precipitation and Cu Gettering in Czochralski Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p365)
• Genration of Oxidation Induced Stacking Faults in CZ Silicon Wafers
  Published in: Defects in Semiconductors 18 (p1737)
• Impurity Engineering of Czochralski Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p261)