Papers by Keyword: DI Center

Paper TitlePage

Depth Distribution of Lattice Damage-Related DI and DII Defects after Ion Implantation and Annealing of 6H-SiC
Authors: Yaroslav Koshka, Galyna Melnychuck
513
Electrical and Structural Properties of Al and B Implanted 4H-SiC
Authors: Yasunori Tanaka, Naoto Kobayashi, Hajime Okumura, Ryoichi Suzuki, Toshiyuki Ohdaira, Mitsuru Hasegawa, M. Ogura, Sadafumi Yoshida, Hisao Tanoue
909
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