Papers by Keyword: DLTS Measurements

Abstract: This paper is a summary of the experimental study of deep levels in a SiC crystal lattice caused by diffusion welding (DW). Investigations were carried out by DLTS and Kelvin Probe methods. Investigations revealed that DLTS method is not applicable for identification of surface states. Research conducted by the Kelvin Probe method has shown an increase in the density of surface states after the diffusion welding from 2x10¹⁵ cm^-2 to 3.5x10¹⁶ cm^-2.

Abstract: In the present paper, 4H-SiC JBS diodes with "boron" p–n junctions have been investigated by means of deep-level transient spectroscopy (DLTS). The sign of the DLTS signal for all the 4H-SiC diodes under study, was positive. The "anomaly" of the DLTS spectra measured is apparently connected with the properties of "boron" p–n junctions. In particular, is presented the role of deep D-centers in recompensation of donors in the JBS diodes.