Papers by Keyword: Deep Centers

Paper TitlePage

Modeling the Influence of Dislocations on Minority Carrier Diffusion Length in Silicon as a Function of Dislocation Contamination
Authors: Winfried Seifert, Martin Kittler
253
Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation
Authors: Alexander A. Lebedev, D.V. Davydov, Anatoly M. Strel'chuk, Alexey N. Kuznetsov, Elena V. Bogdanova, Vitalii V. Kozlovski, N.S. Savkina
973
Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy
Authors: D.V. Davydov, Alexander A. Lebedev, Alla S. Tregubova, Vitalii V. Kozlovski, Alexey N. Kuznetsov, Elena V. Bogdanova
221
Identification of Process Induced Defects in Silicon Power Devices
Authors: Ekaterina V. Astrova, V.A. Kozlov, Alexander A. Lebedev, V.B. Voronkov
539
Capacitance Spectroscopy of Deep Centres in SiC
Authors: Alexander A. Lebedev, N.A. Sobolev
715
Hydrogen in Ternary and Quaternary Materials
Authors: A.Y. Polyakov
295
Spin Dependent Recombination: An Improved Theory Applied to Deep Centers in Silicon
Authors: Michel Lannoo, Didier Stiévenard, D. Deresmes, D. Vuillaume
1359
Energy Shifts Due to the Local Environment of DX Centers in Alx Ga1-x As:Si
Authors: V. Mosser, Sylvie Contreras, P. Lorenzini, Jean-Louis Robert
1117
Showing 1 to 8 of 8 Paper Titles