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Articles by keyword: «Depth Profile»

• AEM Investigation of Interface Structure of Y₂O₃-Ta₂O₅ Co-Doped Zirconia Buffer Layer
  Published in: Electroceramics in Japan VII (p237)
• AES Depth Profiles of Nitrogen Ion Implanted Austenitic Stainless Steel
  Published in: Disordered Materials (p441)
• Depth Profiling of Ultra-Thin Polymer Films on Substrates Studied by Positron Annihilation Spectroscopy
  Published in: Positron Annihilation - ICPA-13 (p367)
• Determination of Residual Stress Gradients in Brittle Materials Using an Improved Spline Algorithm
  Published in: Residual Stress ECRS 5 (p83)
• Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2001 (p851)
• Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High Temperature
  Published in: Silicon Carbide and Related Materials - 1999 (p865)
• Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1017)
• Grinding-Induced Residual Shear Stresses
  Published in: Residual Stresses VII, ECRS7 (p685)
• Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing
  Published in: Silicon Carbide and Related Materials 2001 (p795)
• Interface Reactions and Electrical Properties of Ta/4H-SiC Contacts
  Published in: Silicon Carbide and Related Materials 2006 (p713)
• Investigation of Interface Abruptness in Strained InAs/In_0.53Ga_0.47As Quantum Wells
  Published in: Advances in Crystal Growth (p231)
• Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)
  Published in: Silicon Carbide and Related Materials 2001 (p847)
• Low Temperature Self-Diffusion of Iron in the ⁵⁶Fe/⁵⁷Fe Stable-Isotope Thin-Film System
  Published in: Defects and Diffusion in Semiconductors - An Annual Retrospective IX (p85)
• Molecular Beam Epitaxy of Cu-Doped BaSi₂ Films on Si(111) Substrate and Evaluation & Qualification of Depth Profiles of Cu Atoms for the Formation of Efficient Solar Cells
  Published in: Advanced Materials for Applied Science and Technology (p139)
• Optical-Property Profiling of SiO₂ Films Containing Si Nanocrystals Formed by Si⁺ Implantation
  Published in: Science and Technology of Nanomaterials (p133)