| Paper Title | Page |
|---|---|
|
A Numerical Simulation of Diffusion Experiment in Clay Authors: Qing Chun Yang |
353 |
|
Accumulation of Hydrogen within Implantation-Damaged Areas in Processed Si:N and Si:O Authors: Andrzej Misiuk, Alexander G. Ulyashin, Adam Barcz, Peter Formanek |
319 |
|
Adsorption and Desorption of Hydrogen on Ga-rich GaN(0001) Authors: Y. Yang, V.J. Bellitto, B.D. Thoms, D.D. Koleske, A.E. Wickenden, R.L. Henry |
1533 |
|
Behavior of Hydrogen Atoms in Perovskite-Type Oxide Thin Films under Electric Fields Authors: Kentaro Morito, Toshimasa Suzuki, Youichi Mizuno, Isao Sakaguchi, Naoki Ohashi, Kenji Matsumoto, Hajime Haneda |
281 |
|
Authors: M. Rubel, P. Wienhold |
345 |
|
Defect Behaviour in Deuterated and Non-Deuterated n-Type Si Authors: Jan H. Bleka, Edouard V. Monakhov, Alexander G. Ulyashin, F. Danie Auret, Andrej Yu. Kuznetsov, B.S. Avset, Bengt G. Svensson |
553 |
|
Deuterium Incorpoation in Acceptor Doped Epitaxial Layers of 6H-SiC Authors: Margareta K. Linnarsson, Martin S. Janson, Adolf Schöner, Nils Nordell, S. Karlsson, Bengt G. Svensson |
761 |
|
Dynamics and Nonlinear Effects during Deuterium Implantation of Copper Authors: K. Krishan, B. Panigrahi |
39 |
|
Electric-Dipole Spin Resonance of Be-Doped Silicon Authors: H. Schroth, K. Lassmann, Chr. Borgmann, Hartmut Bracht |
417 |
|
Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiC Authors: Wolfgang J. Choyke, Robert P. Devaty, Song Bai, Adam Gali, Peter Deák, Gerhard Pensl |
585 |