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Articles by keyword: «Deuterium»

• A Numerical Simulation of Diffusion Experiment in Clay
  Published in: Advanced Research on Material Science, Environmental Science and Computer Science (p353)
• Accumulation of Hydrogen within Implantation-Damaged Areas in Processed Si:N and Si:O
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p319)
• Adsorption and Desorption of Hydrogen on Ga-rich GaN(0001)
  Published in: Silicon Carbide and Related Materials - 1999 (p1533)
• Behavior of Hydrogen Atoms in Perovskite-Type Oxide Thin Films under Electric Fields
  Published in: Asian Ceramic Science for Electronics III and Electroceramics in Japan XII (p281)
• Composition and Structure of Codeposited Layers on Plasma Facing Components in Controlled Fusion Devices: Ion Beam and Microscopy Studies
  Published in: Materials Science Applications of Ion Beam Techniques (p345)
• Defect Behaviour in Deuterated and Non-Deuterated n-Type Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p553)
• Deuterium Incorpoation in Acceptor Doped Epitaxial Layers of 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p761)
• Dynamics and Nonlinear Effects during Deuterium Implantation of Copper
  Published in: Non Linear Phenomena in Materials Science III (p39)
• Electric-Dipole Spin Resonance of Be-Doped Silicon
  Published in: Defects in Semiconductors 19 (p417)
• Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiC
  Published in: Silicon Carbide and Related Materials 2001 (p585)
• Hydrogenated Radiation Defects in Silicon: Isotopic Effect of Hydrogen and Deuterium
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p398)
• Incorporation of Hydrogen (¹H and ²H) into 4H-SiC during Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2001 (p565)
• In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2005 (p637)
• Investigation of Ultra Thin Thermal Nitrided Gate Dielectrics in Comparison to Plasma Nitrided Gate Dielectrics for High-Performance Logic Application for 65nm
  Published in: Rapid Thermal Processing and beyond: Applications in Semiconductor Processing (p153)
• Isotope Effects on Hydrogen-Related Bound Exciton Spectra in SiC
  Published in: Silicon Carbide and Related Materials 2003 (p641)