Papers by Keyword: Deuterium

Abstract: The article considers a method for obtaining deuterium storage on titanium samples. The depth of penetration of deuterium ions into the outer surface of porous titanium is calculated by increasing the resistance of the samples. Higher resistance of the samples is shown to be caused by the creation of a dielectric layer of titanium deuteride on the surface. It was proven that the depth of penetration of deuterium ions into the surfaces of the samples is significantly greater than the classical concept about the doping process explains. The design of an ion doping unit contains a vacuum working chamber with a working table for placing samples. The ion beam comes from an ion source in crossed electric and magnetic fields of the Penning type. The working gas of the ion source is deuterium. The ion source gas is supplied through a special fitting in the design of the ion source, connected to the deuterium cylinder through a special leak. The working chamber is pumped out by a high-vacuum unit, to which a pre-vacuum pump is connected at the outlet. The ion implantation unit is electrically powered from three power sources. A power supply with a voltage of up to 5 [kV] and a current of up to 100 [mA] feeds the gas discharge of the source. The 10 [kV] power supply gives a negative potential to the target, and deuterium ions coming out of the hole in the cathode of the ion source are accelerated towards the desktop with the power supply up to 40 [kV] and up to 10 [ma].

Abstract: The new method for synthesis of Benzene-d₆ was discovered. In this process, [Cp*PMe₃IrH₃][OTf] was used as the catalyst at H/D exchange reaction between benzene and deuterium oxide. The prepared method was in an overall yield of 20% and chemical purity of 99.7%. The product contained stable isotopes at 98% enrichment. The MS spectra, ¹³C NMR, IR between benzene and benzene-d₆ were discussed.

Abstract: We have developed a new testing device, which is capable of detecting hydrogen gas evolution from the microstructural changes at the same timing. The device is composed of the tensile testing machine equipped with a high-speed microscope and two types of quadrupole mass spectrometers installed in the ultrahigh vacuum chamber. Sampling rate of microscopic observation is 2000 fps. Hydrogen or deuterium was pre-charged to the 7075 aluminum alloy by means of the slow strain rate deformation, together with the exposure under the humid air atmosphere. The hydrogen amount was measured by using a thermal desorption analysis in advance. As a result, it was revealed that hydrogen gas was evolved when the surface crack was generated around the notch root of the test specimen. SEM observation also showed that the initial crack is related to the propagation of grain boundary fracture around the notch root. When compared to the microstructure and the hydrogen gas evolution near the notch root, the hydrogen amount evolved at the grain boundary was estimated to be about 3.0×10^-7 mol/m².

Abstract: In the fast Z-pinch experiments, the beam-target neutrons, the Deuterium-Deuterium neutrons and Deuterium-Tritium neutrons can be generated. It is a good idea to use deuterium Z-pinch plasmas to generate fusion neutrons which can be used in the fusion-fission breeders. The common design of Z-pinch plasmas apparatuses was introduced. The design of Z-pinch apparatuses for fusion-fission breeders is proposed.

Abstract: The isotopic effect of hydrogen and deuterium on hydrogenation of radiation defects introduced in n-type float zone and Czochralski silicon by irradiation with high-energy alphas was investigated. Silicon diodes were first irradiated with 2.4 MeV alphas to a fluence of 1x10¹⁰ cm^-2 and then hydrogen or deuterium was introduced by rf plasma treatment at 250°C. Reactions of hydrogen and deuterium with radiation defects were monitored by deep-level transient spectroscopy during subsequent isochronal annealing at temperatures ranging from 100 to 400°C. Results show that hydrogen rf plasma effectively neutralizes majority of vacancy related radiation defects created by alphas in both materials. In contrast with it, neutralization by deuterium plasma is substantially weaker. Disappearing of vacancy related defect levels due to hydrogen (deuterium) treatment is accompanied by introduction of two dominant deep levels at E_C-0.309 eV and E_C-0.365 eV. While hydrogenation significantly accelerates annealing of radiation defects especially in Czochralski material, deuteration has weaker effect and gives rise to new defect levels during annealing.

Abstract: Safety assessment of nuclear waste disposal in a deep geological repository requires understanding and quantifying radionuclide transport through the hosting geological formation. Determining diffusion parameters under real conditions is necessary for the performance assessment of a deep geological repository where high level wastes are placed for safety disposal. The in situ diffusion and retention (DR) experiments are designed to study the transport and retention properties of the Opalinus clay formation. In this paper, a scoping numerical simulation is performed in Opalinus Clay, The simulated results for all the traces illustrate that the maximum transport distance perpendicular to the bedding is larger in the isotropic case and those along the bedding is larger in the anisotropic case. Tracer depletion in the isotropic case is a little larger than in the anisotropic case. Deuterium and iodide can be detected in the other interval but strontium can’t. Since the length of injection interval is shorter than the transport distance, the anisotropy effect is clearly measurable. This numerical simulation of diffusion experiment aims at contributing to the optimum design of the experiment. The results of this experiment will provide additional insight into the role of diffusion anisotropy and sorption parameters for radionuclides in clays.

Abstract: The diffusion coefficients of hydrogen (H) and deuterium (D) in Pd were determined in the frame of a quantum mechanical consideration. The three dimensional (3D) wave functions and eigenenergies of H and D at a stable octahedral (o) site and a metastable tetrahedral (t) site were determined by solving the Schrödinger equation with 3D potentials obtained by the first principles calculation. The states of H and D along the diffusion path were also determined by using transient potentials which were obtained with an aid of the nudged elastic band method. The magnitudes of tunneling matrix elements (J) were evaluated from the eigenenergy curves along the diffusion path. In the Pd-H system, thermally activated tunneling transitions are dominant jump processes. On the other hand, in the Pd-D system, it is revealed that a transition via an extended state where the wave function spreads both to o- and t-sites also has a considerable contribution to the diffusion. The calculated diffusion coefficients for H and D quantitatively agreed with experimental values and the so-called inverse isotope effect was reproduced.

Abstract: The behavior of hydrogen in (Ba,Sr)TiO3 (BST) thin film capacitors under electric fields was investigated by performing secondary ion mass spectroscopy (SIMS) analyses. It was clearly observed that the ingress of atmospheric hydrogen into BST thin film capacitors occurred through the anode and that it diffused toward the cathode under electric fields. In addition, it was found that the deterioration of the I-V properties of the BST thin film capacitors can be interpreted in terms of the distribution of hydrogen concentration in the BST thin films.

Abstract: Accumulation of hydrogen in Czochralski silicon implanted with N2+ (Si:N; N dose, DN=1–1.8x1018 cm-2; energy E=140 keV) or O2+ (Si:O; DO=1x1017 cm-2; E=200 keV), processed at up to 1400 K (HT) under enhanced Ar pressure, up to 1.2 GPa (HP), and followed by treatment in hydrogen (deuterium) plasma, was investigated by Secondary Ion Mass Spectroscopy. Implantation produces buried amorphous layer. As determined by transmission electron microscopy, subsequent HT-HP processing results in a formation of a specific sample microstructure. In plasma treated as-implanted Si:N, hydrogen accumulates at a depth of about 50 nm, up to concentration 2x1021 cm-3. This concentration is twice lower at a depth ≈ 80–250 nm. Deuterium content remains almost unchanged after plasma treatment of Si:N prepared by processing at 1270 K while it is strongly dependent on DN and on HP. In plasma treated Si:O, prepared by processing at 920-1230 K, hydrogen profile corresponds to that of implanted oxygen and decreases with HP. Comparative analysis of hydrogen accumulation and its subsequent release at 720-920 K in the Si:N and Si:O structures indicates that the capacity of buried layers in Si:O to getter and to preserve hydrogen is higher than that in Si:N.

Abstract: In this work we present a comprehensive comparison of ultra thin thermally nitrided (TN) to plasma nitrided (PN) gate dielectrics (GD). We will show that thermal nitridation is a promising technique to increase the nitrogen concentration up to 25%. Furthermore, we will demonstrate that ultra thin thermally nitrided GD have the potential to be an alternative solution compared to plasma nitrided GD. This work includes the analysis of physical and electrical parameters as well as reliability results from reliability characterization. Additionally, we investigated the impact of Deuterium on electrical parameters and reliability behavior.