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Papers by Keyword: Dynamic Annealing

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Ion Implantation Processing and Related Effects in SiC

Authors: Bengt Gunnar Svensson, Anders Hallén, J. Wong-Leung, Martin S. Janson, Margareta K. Linnarsson, Andrej Yu. Kuznetsov, Giovanni Alfieri, Ulrike Grossner, Edouard V. Monakhov, H. K.-Nielsen, C. Jagadish, Joachim Grillenberger

Abstract: A brief survey is given of some recent progress regarding ion implantation processing and related effects in 4H- and 6H-SiC. Four topics are discussed; an empirical ion range distribution simulator, dynamic defect annealing during implantation, formation of highly p+-doped layers, and deactivation of N donors by ion-induced defects.

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Ion Beam Synthesis: A Novel Method of Producing (SiC)_1-x(AIN)_x Layers

Authors: R.A. Yankov, W. Fukarek, M. Voelskow, Joerg Pezoldt, Wolfgang Skorupa

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