Papers by Keyword: Electron-Hole Plasma

Abstract: Stimulated emission and optical gain problems are reviewed on the basis of analysis of highly photoexcited III-Nitride and ZnO wide-gap materials. Spontaneous and stimulated emission along with optical gain of these materials in UV region is analyzed. The possible mechanisms of inverted population in In-containing materials and ZnO semiconductors are discussed involving mechanisms of dense electron-hole plasma, carrier (exciton) localization, as well as various interaction processes in dense exciton gas.

Abstract: At uniform excitation of semiconductors by laser radiation with pre-threshold power, locally melted regions are formed on irradiated surfaces. This is induced by thermo diffusive instability of a distribution of uniformly generated electron-hole plasma. The shapes of locally melted regions give rise to a great variety of interesting surface patterns. A mathematical model of the surface dynamics, when the instability of the melt front arises along a chosen wave vector, is proposed. The results of computer simulation of interface dynamics of solitary melted region are compared with experimental data.