Papers by Keyword: Electron Irradiation

Abstract: The authors have investigated deep levels in electron-irradiated n- and p-type 4H-SiC epilayers by deep level transient spectroscopy (DLTS). By low-energy electron irradiation at 116 keV, the Z1/2 and EH6/7 concentrations are increased in n-type samples, and the concentrations are almost unchanged after annealing at 950°C for 30 min. In p-type samples, the unknown centers, namely EP1 and EP2, are introduced by irradiation. By annealing at 950°C, the unknown centers are annealed out. The HK4 center (EV + 1.44 eV) is increased by the electron irradiation and subsequent annealing at 950°C. The dependence of increase in the trap concentrations by irradiation (NT) on the electron fluence reveals that NT for the Z1/2 and EH6/7 centers is in proportional to the 0.7 power of electron fluence, while the slope of the plot is 0.5 for the HK4 center. The Z1/2 and EH6/7 centers show similar annealing stage and are thermally stable up to 1500-1600°C, while the HK4 center is annealed out at about 1350°C. The Z1/2 and EH6/7 centers may be derived from a same origin (single carbon vacancy: VC) but different charge state. The HK4 center may be a complex including VC.

Abstract: The high-temperature persistent PL defect known as DII is commented on within this study, seen for the first time in low-energy electron irradiated 4H SiC. The local vibrational modes associated with the defect have been identified and the temperature dependence, spatial variation and electron-energy/electron-dose variation of this defect have all been investigated.

Abstract: Use of a transmission electron microscope to irradiate silicon carbide samples has been demonstrated as a useful additional characterisation technique. The photoluminescence spectra of crystal defects introduced in this way have been found to be extremely rich in detail, involving more than 50 zero phonon lines. It is perhaps disappointing that relatively few of these optical centres have been identified conclusively. Indeed, controversy exists over most of the interpretations that have been advanced. As a step towards clarifying this situation we have been studying many of the more important photoluminescent systems by investigating the dependence of the results on the sample n- and p-doping levels, their stoichiometry, the source of supply, the electron dose, the subsequent annealing history, and by exploiting two new aspects of the technique that will be introduced here. A brief review will be given of new results obtained for some of the major optical centres. Most of the irradiations have been performed at room temperature using 300 kV electrons but some were carried out at 750°C.

Abstract: We have investigated the electrically active deep level defects in p- and n-type 4H-SiC after low energy electron irradiation. Intrinsic defects were created by irradiation with 200 keV electrons, with energy sufficient to move only the carbon atoms in SiC lattice. Defect spectra were compared between the p- and n-doped samples prepared under identical irradiation conditions. We probed both conduction and valence band sides of the band-gap by using capacitance transient techniques with electrical and optical trap filling. We have found that the defect spectrum in the p-type epilayers differs significantly from the n-type. The Z1/Z2, EH1 and EH3 electron traps which are usually present in irradiated n-type material could not be detected in p-type samples. An electron trap at 1.6 eV below the conduction band edge is present in both n- and p-type samples at the same energy position and with similar concentration, therefore it is probably related to the same type of defect. We have also found a new hole trap in p-type epilayers at energy EV + 0.66 eV.

Abstract: The unusual behaviour of two optical centres with zero phonon lines close to 463nm has been investigated by means of low-temperature photoluminescence microscopy using 488nm and 325nm laser excitation. The experiments were performed on as-irradiated samples and also after annealing isochronally to various temperatures up to 1300°C.

Abstract: The influence of a tribological process in the polymer/metal system on changes in microhardness (H) and Young’s modulus (E) of the surface under friction and UHMWPE volume has been studied. Twelve samples of polyethylene characterized by a different degree of initial plastic deformation and different electron irradiation dose were analyzed. For four of the samples a decrease by 5÷10 times in polyethylene degradation has been found. This result is promising in that a prolonged durability can be expected in case of application for endoprostheses acetabular cups. It has been found also that a polyethylene material irradiated after initial prestraining only once shows enhanced micromechanical properties after friction. It has been found that this result was due to reorientation of lamellas on the friction surface taking place during deformation which accompanies the tribological process. It has been proved that the increase of H and E values in the layers situated at a depth of 1.5 mm÷7.5 mm is due to a decrease of the free volume centers in the UHMWPE polyethylene and to an increase of the degree of spatial arrangement of the structure (absorption in crystallinity band of FTIR spectrum).

Abstract: Formation of a nanocrystalline structure through rapid solidification, thermal crystallization and electron irradiation induced crystallization was investigated in Fe-Nd-B alloys. A nanocrystalline structure was obtained by rapid quenching of the melt in a Fe86Nd9B5 alloy, while an amorphous single phase was formed in a Fe77Nd4.5B18.5 alloy. In the latter alloy, a nanocrystalline structure was obtained by thermal crystallization and electron irradiation induced crystallization of the amorphous phase. The average grain size of the precipitate obtained by irradiation at 298 K was about 8 nm, which is much smaller than that obtained during thermal crystallization. Results indicate that electron irradiation is effective for obtaining a novel nanocrystalline structure in Fe-Nd-B alloys.

Abstract: The influence of preliminary treatment in hydrogen plasma on elimination of radiation defects and formation of thermal donors has been studied in detector structures made of standard and oxygenated float zone silicon has been studied. A new type of thermal donors has been found in as-treated diodes. These thermal donors are unstable and can be eliminated by heat-treatment at 200-250°C. After irradiation with 3.5 MeV electrons the detectors had been annealed at temperatures of 50-350 °C. It has been found that preliminary hydrogenation at 300 °C leads to disappearance of main vacancy-type radiation defects at lower annealing temperatures. The annealing of hydrogenated and irradiated crystals is accompanied by hydrogen redistribution and formation of hydrogen-related donors. Preliminary irradiation influences on both these processes.