Papers by Keyword: Electronic Package

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Abstract: For flip-chip process of RF system-on-packages(SOP), double bump bonding processes were investigated. Sn-Ag and Sn solder joints were formed by the reflowed double bumping process, and Sn/In/Sn bump joints were fabricated by the non-reflowed double bump bonding process. The height-to-size ratios of 0.78 and 0.65 were obtained for the reflowed double bumping and the non-reflowed bumping, respectively. Average contact resistance of the reflowed Sn-Ag and Sn solder joints was about 13m/ which was much lower than 24~33m/ of the non-reflowed Sn/In/Sn bump joints. The reflowed solder double bumping method is more suitable for flip-chip process of RF-SOP than the non-reflowed double bump bonding.
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Abstract: The detection of interfacial micro-delamination in the thin-layered structure such as the electronic package becomes very important as the electronic device becomes smaller and thinner. The conventional method used to detect the delamination in an electronic package is to use a scanning acoustic microscope (SAM). However, despite its high performance qualities, SAM is often faced with a tricky decision when a delaminated gap is too small. In this paper, a novel method based on ultrasonic nonlinearity is proposed to overcome this limit. The proposed method is integrated into the conventional SAM equipment, and its effectiveness is verified by experiments for the Newton Ring and the real semiconductor package that have micro-delaminations. The results showed that the nonlinear parameter had good correlation with the gap size of delamination. A method of imaging the nonlinear parameter is also proposed to assure the feasibility of the proposed method in the field application.
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Abstract: Thermal deformation behaviors of electronic packages, stacked-MCP (multi chip package) and SOJ (small outline J-leaded package) were measured by phase-shifting moiré interferometry. This method was developed using a wedged glass plate as a phase shifter to obtain displacement fields with a sensitivity of nanometer scale. Digital image processing was also introduced to determine the strain distributions quantitatively. In stacked-MCP, thermal loading was applied from room temperature 25°C to two elevated temperatures (75 and 100°C), and thermal strains were then examined at these two elevated temperatures. The results showed that the normal strain εxx concentrated at the ends of two silicon chips, and the transverse strain εyy increased between the two silicon chips. The shear strain γxy increased at the end of the lower silicon chip to 0.30% from 0.17% when the temperature increased by 25°C. In SOJ, the thermal strains were investigated with the two packages before and after mounted on PWB (printed wiring board). The results showed that the strains increased by about 50% when the SOJ was mounted on the PWB.
862
Abstract: The delamination problem in plastic ball grid array electronic package was investigated analytically and experimentally. The ANSYS code was used in the analysis to find the deformation and the stress distribution in electronic package due to the thermal mismatch between different materials at reflow temperature with saturated moisture pressure at the delaminated region. The stress intensity factor and the strain energy release rate at the tip of interfacial delamination were calculated using the fracture mechanics approach. The results show that the delaminaton occurs at the corner of the die pad and at the middle region of the die attach/die pad interface. The delaminaton grew from the middle region of the die attach/die pad interface, along the epoxy molding compoend/die pad interface, the epoxy molding compound/substrate interface to the exterior surface. Possible growth directions of the interfacial delamination in plastic ball grid array electronic package were identified and observed in the experimental results. In addition, the reflow temperature affected the stress distribution and the strain energy release rate at the tip of interfacial delaminaton.
363
Abstract: The linear ultrasonic technique has been extensively used as a powerful, non-destructive test tool for reliability testing and failure analysis of electronic packaging. This is used most often in the inspection of defects such as delaminations, voids, or cracks through use of a SAM (Scanning Acoustic Microscope). Then, as the reliability level that is required of electronic packaging becomes higher and the thickness of package becomes thinner, the possible defect which needs to be detected becomes smaller. In the conventional SAM, however it is very difficult to detect small defects less than m µ 1 . 0 , such as micro-delaminations. In order to solve such a problem, this paper proposes a nonlinear ultrasonic method, where the nonlinearity caused by the effect of crack-face interactions is considered. The basic concept of this method involves harmonic frequencies that are generated in the transmitted ultrasonic wave due to the partial contact at the interface of micro-delamination. As an evaluation index, the nonlinear parameter dependent on the amplitude of the second order harmonic frequency component is obtained by spectral analysis of the transmitted signal. Experimental results show that the nonlinear parameter has good correlation with the micro-gap and the proposed method can detect the micro-delamination even less than nm 1 .
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