Papers by Keyword: Full-Width at Half Maximum

Abstract: Adopting the concepts of integration and cumulative sum of exposure energy in the intersecting region between two fabricated line segments, an analytical method of exposure energy density equation for near field photolithography of font fabrication is established. At the same time, cutting photoresist into limited nodes, together with the use of the integral equation of exposure energy density and Mack’s developing model, the full-width at half maximum (FWHM) and fabrication profile of font can be calculated. As analyzed in the study, in the intersecting region between two fabricated line segments, the greater the exposure energy, the deeper the fabrication depth; while in the straight-line region of fabricated lines, as the exposure energy is equal, all the fabrication depths are the same. The research analysis of the paper can be a reference for near field photolithography of font.

Abstract: Y3Al5O12:Ce phosphor was prepared by solid-state method, and the XRD pattern is consistent with the standard phase of YAG. Temperature dependence photoluminescence (PL) measurements of Y3Al5O12:Ce excited at 342 nm only show a broad emission band with peak at 532 nm is assigned to the combination of the lowest energy of 5d bands and the 2F5/2 and 2F7/2 states respectively. And full widths at half maximum (FWHM) and emission energy of Y3Al5O12:Ce emission increase with increasing temperature. The red shift and FWHM in the PL spectra with the temperature increasing are simulated by equations for the temperature dependence using LM, BFGS, DE, GA and SA algorithms, and compared the RMSE, SSE, R, R^2, DC and Chi-Square of each result respectively. Moreover, comparison of the result from the computer simulation in LM, BFGS, DE, GA and SA methods through compared values of the RMSE, SSE, R, R^2, DC and Chi-Square parameters are discussed.

Abstract: ZnS:Mn Quantum dots (QDs) excess of [S2-] were synthesized by the wet chemical precipitation method with an average diameter of 3.9 nm. Temperature dependence photoluminescence measurements of ZnS:Mn QDs excited at 330nm only show a clear broad emission band with peak at ～595nm assigned to the 4T1→6A1 transition within the 3d5 configuration of Mn2+ in QDs. Through the temperature dependence of emission intensity, emission energy and full widths at half maximum (FWHM), the mechanisms are analyzed to explain the temperature behavior of Mn2+ emission observed here reasonably. The Mn2+ emission intensity decreases with increasing temperature. And the blue shift of the Mn2+ emission energy increase is also observed for increasing the temperature. Furthermore, the FWHM shows weak temperature dependence below 110 K and shows an increase with temperature increasing above 110 K. Consequently, the intrinsic mechanisms of temperature dependence photoluminescence are investigated.

Abstract: Nano - crystalline Al-Mg-Mn was synthesized by ball milling technique. Microstructure of these alloys has been studied from X-ray line broadening. The crystallite size of nano - crystalline Al-Mg-Mn system decreases by increasing the Mg content, While the micro-strain, median diameter,, and geometrical standard deviations,  increases by increasing the Mg content. Micro-hardness of our system has been investigated by Vickers hardness test. The hardness increases by increasing the Mg content.

Abstract: In depositing the TiN thin films to the substrate by Physical Vapor Deposition (PVD), it influences the substrate interface. Change of the residual stress and the full-width at half maximum (FWHM) in each process of the TiN deposition of thin film was measured by the X-ray stress measurement. As a result of the X-ray stress measurement, there are no changes in the residual stress and the FWHM. It is thought that there is a difference in the penetration depth to the substrate of X-rays and Ti ion.