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Papers by Keyword: GSMBE

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Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy

Authors: Shun-ichi Nakamura, Tomoaki Hatayama, Tsunenobu Kimoto, Takashi Fuyuki, Hiroyuki Matsunami

201

The Peculiarities of a Non-Stationary Growth Kinetics in GSMBE and their Influence on Si/ Si_1-xGe_x Interfaces Abruptness

Authors: L.K. Orlov, A.V. Potapov, S.V. Ivin

221