Papers by Keyword: H₂ Plasma

Abstract: In this study, a 1350oC-sintered 98 mol% ZnO-1 mol% Al₂O₃ (AZO, Zn:Al= 98:2) ceramic was used as a target and deposited on glass using a r.f. magnetron sputtering system at a deposition temperature of 200°C. The effects of different H₂ flow rates (H₂/(H₂+Ar)=0% ~ 9.09%, abbreviated as H₂-deposited AZO films) added during the deposition process on the crystallization, resistivity, and optical transmission spectrum of AZO films were investigated. The Burstein-Moss shift effects were measured and used to prove that the defects of AZO films decreased with increasing H₂ flow rate. For comparison, the 2% H₂-deposited AZO films were also treated by the H₂ plasma at room temperature for 60 min (plasma-treated AZO films). The effects of H₂ plasma on the properties of the H₂-deposited AZO films were also studied. The value variations in the optical band gap (E_g) of the H₂-deposited and plasma-treated AZO films were evaluated from the plots of (αhv)² = c (hν-E_g).

Abstract: We demonstrated a new fabrication method of Pt- and Ni-silicide nanodots with an areal density of the order of ~1011 cm-2 on SiO2 through the process steps of ultrathin metal film deposition on pre-grown Si-QDs and subsequent remote H2 plasma treatments at room temperature. Verification of electrical separation among silicide nanodots was made by measuring surface potential changes due to electron injection and extraction using an AFM/Kelvin probe technique. Photoemission measurements confirm a deeper potential well of silicide nanodots than Si-QDs and a resultant superior charge retention was also verified by surface potential measurements after charging to and discharging. Also, the advantage in many electron storage per silicide nanodot was demonstrated in C-V characteristics of MIS capacitors with silicide nanodots FGs.