Papers by Keyword: ITO Thin Film

Abstract: Indium tin oxide (ITO) thin films with 100 nm thickness were successfully deposited on soda-lime glass substrates by metal oxide electron beam evaporation at room temperature. The deposited films were post annealed via rapid thermal processor (RTP) in vacuum environment at 400 to 550 °C. All deposited ITO thin films were studied on the structural, electrical, and optical properties. Results showed that the post annealing treatment by RTP improved the crystallinity, increased crystallite size, and increased surface roughness values. Higher RTP post annealing temperature also enhanced the electrical performance that led to higher transmittance of ITO thin films.

Abstract: Indium doped tin oxide (ITO) thin films were deposited on silicon wafer (100) and glass slide by ion assisted electron beam evaporation deposition. After deposition, the ITO thin films were annealed in vacuum (100-300°C) and their structural, optical and electrical properties were systematically investigated. X-ray diffraction,atomic force microscopy, ultraviolet–visible (UV–vis) spectrophotometer and hall-effect measurement were employed to obtain information on the crystallization, transmission and resistivity the films.It was found that the rapid thermal annealing can improve the resistivity of ITO thin films which specializes for the transparent conductive layers.

Abstract: Indium tin oxide (ITO) films were deposited on glass substrates by using the homemade spray pyrolysis system. Orthogonal test was designed to examine the optimal conditions for preparation of the ITO films. The results showed that the ITO thin films can be prepared by the homemade spray pyrolysis device successfully. The device is simple in structure and easy to use. The substrate temperature is the main factor on the photoelectric properties of the ITO films. The optimal conditions for preparing the ITO thin films were as following: the substrate temperature is 300oC, the carrier gas flow of the air was 1.5 L•min-1, the annealing temperature was 500oC, the proportion of the indium and tin was 10:1, the distance between substrate and nozzle was 8 cm, and the deposition time was 3.5 min. The average optical transmittance in the visible range and sheet resistance of the ITO film were 93% and 2786Ω/□, respectively.

Abstract: Biosensors’ research filed has clearly been changing towards the production of multifunctional and innovative design concepts to address the needs related with sensitivity and selectivity of the devices. More recently, waveguide biosensors, that do not require any label procedure to detect biomolecules adsorbed on its surface, have been pointed out as one of the most promising technologies for the production of biosensing devices with enhanced performance. Moreover the combination of optical and electrochemical measurements through the integration of transparent and conducting oxides in the multilayer structures can greatly enhance the biosensors’ sensitivity. Furthermore, the integration of polymeric substrates may bring powerful advantages in comparison with silicon based ones. The biosensors will have a lower production costs being possible to disposable them after use (“one use sensor chip”). This research work represents a preliminary study about the influence of substrate temperature on the overall properties of ITO thin films deposited by DC magnetron sputtering onto 0,5 mm thick PMMA sheets.

Abstract: Based on the single-layer thin film theory, we calculated transmittance of ITO thin film. The reflectivity arrive a maximum or a minimum according to whether the refractive index of film is greater or smaller than the refractive index of the glass substrate. we obtain the same maximum of transparence which is above 95% and the minimum value which decrease to 76.5% with the increase of refractive index.

Abstract: Transparent and conductive ITO thin films were prepared on quartz glasses by the sol-gel dip-coating method and treated by ultraviolet irradiation, with 4W (254nm), 15W (254nm), 15W (365nm) and 500W (365nm) respectively. The experimental results suggest that UV irradiation could enlarge the size of crystalline and improve the conductive property of ITO thin films significantly. The relative reduction in sheet resistance rose, resulting from increase in power and irradiating time, as well as decrease in wavelength of UV irradiation. In addition, for those samples which were treated by UV irradiation and placed at room temperature for 20 days, the internal action could cause the conductivity to rise, and decrease the minimum sheet resistance to 41.378Ω/m².

Abstract: ITO thin films used in PTCDA/Si detector should be made at low temperature for low temperature resistance of substrate. ITO thin films were deposited at low temperature by RF magnetron sputtering. Properties of ITO thin films such as conductivity and transmission measured by 4 point probe and UV spectral photometry respectively. The results show that the sputtering pressure is an important parameter in the deposition of indium tin oxide（ITO） thin films, which affects the properties of ITO films. The optimized parameter for preparation of ITO thin films at low temperature are sputtering pressure 0.45 Pa, sputtering power 45W. Meanwhile, the post-annealing is not necessary.

Abstract: A new triangular-shape designed tool as a cathode in microelectromechanical etching process is a precision nanoscale production of a reclamation system of Indium tin oxide (ITO) thin-films defects removal from optoelectronic flat panel displays’ color filter surface is demonstrated in the current study. Through the ultra-precise removal of the thin-film nanostructure, the optoelectronic semiconductor industry can effectively reclaim defective products, reducing production costs. In the current experiment, a large size triangular shape cathode is accompanied by a small gap-width between the cathode and the workpiece takes less time for the same amount of ITO removal. A higher feed rate of displays’ color filter or a small end radius of the cathode combined with enough electric power produces fast machining. Pulsed direct current can improve the effect of dregs discharge and is advantageous in association with a fast workpiece feed rate. However, it raises the current rating. A large flow rate of the electrolyte corresponds to a higher removal rate for the ITO nanostructure. The electrochemical etching just needs a short time to make the ITO remove removal easy and clean.

Abstract: Laser patterning technology of indium tin oxide thin films has been studied in this research. ITO thin films, which usually coat on the glass and the plastic substrate, have been adopted in the flat panel displays (FPDs) and the plasma display planes. The conventional method of the ITO patterning usually uses the wet chemical etching processing. However, the wet etching processing is not adopted in the plastic materials because the chemical fluid usually damages the plastic substrate. The laser direct writing processing has been developed and replaces the wet etching processing. This investigation is interested in the laser patterning used the third-harmonic Nd:YAG laser (355 nm) to ablate the ITO films of glass substrate. The scanning electron microscope (SEM) measures the characterization of the ablated grooves used the different parameters, including the laser energy, the repetition rate and the feeding speed of the table. Finally, the effect parameters of laser ablating ITO film will be presented in this paper.

Abstract: The transparent ITO multi-layers films were fabricated on quartz glass substrate by colloid dip-coating technique from indium metal ingots and stannic chloride. It was systematically studied that the effect of the electrical properties of the ITO on doped Sn in quantitative change, different dip-coating technological conditions such as thermal treatment process, coating number plies by four-probe instrument. From the 5 wt. % Sn to 20 wt. % Sn, with the amount of doped Sn increasing, the sheet resistance of ITO was up to minimum and then increased. Sintering temperature and holding time were the reasons for the electrical properties of the ITO films, when other parameters are unaltered. It is also concluded that coating number plies was play an important role on electrical properties of ITO films by sheet resistance. From the results of research, it can be seen that the multi-layer films has optimum characteristics, whose sheet resistance is 117'/□, when the use level of Sn is 10%wt,heated in 800°C 15min with repeated dip-coating seven times..