Papers by Keyword: Implant Annealing

Abstract: This work presents a summary on the use of rapid thermal processing for implant annealing. It gives a short historical overview of rapid thermal processing systems and the first implant anneal processes on these newly developed tools. We then looked in detail on the soak anneal and spike anneal processes and the influence of certain process parameters. For the soak anneal influences of the ambient, either oxidizing or nitriding, were evaluated. The results of spike anneal processes are influenced by the pre-stabilization temperature, ramp-up and ramp-down rate, peak temperature, and gaseous ambient. The need for shallow, abrupt and highly activated junctions leads to co-implantation of species like fluorine or carbon in conjunction with pre-amorphization. Nowadays, combinations of spike and millisecond annealing as well as millisecond annealing alone are in the focus.

Abstract: Post-implant annealing of Al implanted 4H-SiC has been performed in the temperature range from 1600°C to 1750°C. Annealing was conducted in a hot-wall CVD reactor using a silanerich ambient. Ar was used as the carrier gas to deliver the silane to the annealing zone where the sample was heated via RF induction. The resulting annealed surfaces exhibited a step-bunch free, smooth morphology when viewed on SEM and AFM. The maximum surface roughness as measured via AFM was 0.65 nm RMS for the sample annealed at 1750°C.

Abstract: Mechanisms and consequences of silicon vapor condensation during SiC epitaxial growth or implant annealing with silane overpressure were investigated. The model for the silicon liquid droplets formation in the gas phase and their deposition on the surface of the SiC substrate was developed. The droplet formation dependence on the silane flow rate, temperature profile in the reactor, and the local temperature variations introduced by the wafer carrier and SiC substrate were investigated.