Papers by Keyword: Impurity Atoms

Abstract: The proposed dislocation model describes the orientation dependence of the critical resolved shear stress (CRSS) and deformation mechanisms on the yield point in single crystals of austenitic stainless steel with nitrogen impurities. The model takes into account the following: the change of the interstitial atom position in the lattice from octahedral interstice to tetrahedral site owing to passage of a leading Shockley’s partial dislocation; the change in the separation width between two partial dislocation in external stress field; the relationship between the width of the extended dislocation and the elastic interaction of the extended dislocation with the impurity atoms.

Abstract: Based on the X-ray method an experimental research has been carried out aimed to estimate the pulsed magnetic field influence on the heterodiffusion of Al in -Fe within the temperature interval of 700-820 °С and at the amplitude intensity of the magnetic field pulse equal to 0–557.2 kА/m and its frequency ranging from 0 to 8 Hz. It is established that the pulsed magnetic field changes noticeably the value of the measured coefficient of Al diffusion in -Fe. Possible mechanisms of the pulsed magnetic field influence on the diffusion process are considered on taking into account the interaction of moving domain walls, dislocations and impurity atoms.

Abstract: This paper reports on the ultra-rapid thermal annealing of next generation MOSFETs. In ultra-rapid thermal annealing, the most important issue is to achieve a good balance between electrical activation and impurity diffusion. Another issue of annealing implantation damages is also discussed: Optimized annealing combined with millisecond annealing and conventional halogen lamp annealing is necessary for annealing out defects at end-of range region. Application possibilities of millisecond annealing for deep junction activation and oxidation are also discussed.

Abstract: Impurity atoms in a high-purity semi-insulating 4H-SiC substrate fabricated by sublimation and an n-type 3C-SiC substrate fabricated by Chemical Vapor Deposition (CVD) were evaluated by neutron activation analysis. Cr, Fe, Zn, As, Br, Mo, Sb, Eu, Yb, Hf, Ta, W and Au atoms were detected in the 4H-SiC fabricated by sublimation. In the 3C-SiC fabricated by CVD, Cr, Zn, As, Br, Mo, Sb, La Sm and Hf atoms were found. The concentration of these atoms tends to decrease with increasing atomic number.