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Articles by keyword: «InAs»

• Acceptor-Hydrogen Complexes in InAs
  Published in: Defects in Semiconductors 18 (p963)
• Acceptor-Hydrogen Interaction in InAs
  Published in: Defects in Semiconductors 19 (p1223)
• Damage Production in Ion Implanted III-V Compounds: A Comparative Study
  Published in: Materials Science Applications of Ion Beam Techniques (p261)
• Defect Interaction with the Double Donor ⁷⁷Br in GaAs and InAs
  Published in: Defects in Semiconductors 17 (p1155)
• Defect States in InAs Quantum Dots Characterized by Photo-Induced Current Transient Spectroscopy
  Published in: Defects and Diffusion in Semiconductors (p81)
• Dose Rate and Temperature Dependence of the Crystallization Rate during IBIEC in InAs
  Published in: Materials Science Applications of Ion Beam Techniques (p257)
• Electrical and Optical Characterization of Energy States in Self-Assembled InAs/GaAs Quantum Dots with Size Distribution
  Published in: On the Convergence of Bio-, Information-, Enrivonmental-, Energy-, Space- and Nano-Technolgies (p1023)
• Growth of InAs Quantum Dots on a Low Lattice-Mismatched AlGaSb Layer Prepared on GaAs (001) Substrates
  Published in: Functional Nanomaterials for Optoelectronics and other Applications (p49)
• Morphological, Structural and Electronic Damage on InAs and InSb Surfaces Induced by (Reactive) Ion Beam Etching
  Published in: Defects and Diffusion in Semiconductors (p127)
• PAC-Investigations of the Donor-Defect Interaction in III-V Compound Semiconductors with the Probe ⁷⁷Br(⁷⁷Se)
  Published in: Defects in Semiconductors 18 (p1419)
• Surface Structure and Electronic Property of Sulfur Passivation of InAs(001) Surface: A First-Principles Study
  Published in: Materials Modeling, Simulation, and Characterization (p220)
• Synthesis and Characterization of III-V Rod Shape Semiconductor Nanocrystals
  Published in: Current Research in Advanced Materials and Processes (p121)
• The Structural and Photoluminescence Character of InAs Quantum Dots Grown on a Combined InAlAs and GaAs Strained Buffer Layer
  Published in: PRICM-5 (p1791)
• Vacancy-Type Defects in Proton-Irradiated InAs
  Published in: Positron Annihilation - ICPA-12 (p73)