Papers by Keyword: InP

Abstract: We demonstrate how growth parameters may be adopted to produce morphologically controlled high-quality indium phosphide (InP) nanowires suitable for optoelectronic device applications. Growth temperature, V/III ratio, and catalyst particle size have a significant effect on the morphology, crystallographic quality, and optical properties of the resulting nanowires. Significantly, we find that higher growth temperatures or higher V/III ratios promote the formation of wurtzite (WZ) nanowires while zinc-blende (ZB) nanowires are favourable at lower growth temperatures and lower V/III ratios. Results also show that InP nanowires grow preferably in the WZ crystal structure than the ZB crystal structure with increasing V/III ratio or decreasing diameter. This causes a blue-shift in the bandgap as growth temperature increases. These results show that careful control of growth temperature, V/III ratio and catalyst size are crucial for obtaining InP nanowires of a specific crystal structure needed for device applications.

Abstract: A submicron InGaAs/InP DHBT fabricated using triple mesa structure and BCB planarization technology is presented. All processes are on 3-inch wafers. The DHBT with emitter area of 0.7×10μm2 exhibits a current cutoff frequency ft and a maximum oscillation frequency fmax both of 280GHz. The breakdown voltage is more than 4V. The high speed InGaAs/InP DHBT with comparable high breakdown voltage is promising for voltage controlled oscillator (VCO) and mixer applications at W band or even higher frequencies.

Abstract: In situ NH₃ plasma nitridation was utilized to passivate InP surface, HfLaO_x film was grown by plasma enhanced atom layer deposition method, and the HfLaO_x film remain amorphous after 500°C annealing. High-resolution transmission electron microscopy (HRTEM) images showed that in situ NH₃ plasma nitridation process make the boundary between InP and HfLaO_x smooth and sharp, and could suppress the formation of the interfacial layer. X-ray photoelectron spectra (XPS) results indicated In-N and P-N bonds were formed on the nitride InP surface. The electrical measurements indicated in situ NH₃ plasma nitridation process reduced the hysteresis improved capacitance density and to 7 mV, a sharp transition from depletion to accumulation was observed, the interfacial density states (D_it) of the sample with nitridation was 1.67×10¹² cm² eV¹, and the equivalent oxide thickness (EOT) was 0.6 nm. The leakage current was 1.5 mA/cm² at V_g-V_fb=1V.

Abstract: Catalyst-free InP nanowires were grown on Si (100) and Si (111) substrates by metal organic chemical vapor deposition and the morphology, crystal structure, and optical properties of the nanowires are investigated. X-ray diffraction results show two peaks of InP (111) and InP (220) in the spectra. Two more peaks of InP (200) and InP (311) are observed if PH₃ thermal annealing is performed on the sample for 15 minutes after nanowire growth is completed. The InP (220), InP (311), and InP (200) peaks originate from InP crystal formation on top of the nanowires; only the InP (111) peak originates from the InP nanowires. Finally, the temperature dependence of the PL peak positions of InP nanowires grown on Si (100) and InP substrate are measured.

Abstract: The III-V semiconductors materials and in particularly Indium Phosphide are a promising candidates for the elaboration of high speed electronic compounds. The importance of the interface study is increasing considerably in the last years to understand, the mechanism of interface formations and to control perfectly the technology of the elaborated compounds.This study presents an electrical characterization of InP(p)/InSb/Al₂O₃/ Au structures in the range of temperature varying from the temperature of liquid nitrogen to the temperature of 400°K. In order to give the evolution of electrical parameters of these structures with temperature, we have realized Capacitance-Voltage measurements at high frequency for different temperatures. The found results show that there is dispersion in the accumulation region as function with temperature. The quantity of positive charges in the insulator is estimated to 1.37x10¹² atm/cm² at room temperature. This value decreases slightly with increasing temperature. It varies from 1.57x10¹² atm/cm² at 77°K to 1.12x10¹² atm/cm² at 400°K. The interface insulator/semiconductor of our samples presents a good electronical quality, the state density is equal to 4.10¹¹ eV^-1.cm^-2 at room temperature, this one increases from 4.7x10¹⁰ eV^-1.cm^-2 to 7.10¹¹ eV^-1.cm^-2 when temperature increases from 77°K to 400°K.

Abstract: This paper reports on the development of InP transferred-electron-device sources in mainland of China for operation at around 100 GHz. Using n+-n-n+ structure with graded doping profiles, the oscillations were obtained at 101.8 GHz from a 1 μm structure with an n-doped drift zone and the doping concentration linearly increases from 1.0×1016 to 3.0×1016cm-3. Its continuous wave radio frequency (CWRF) output power was evaluated to be several milliwatt and these results are believed to correspond to a fundamental mode operation. This result is attributed to a processing technique based on the use of etch-stop layers, removal of substrate and the formation of good ohmic contacts.

Abstract: This paper has studied the optical properties of the semiconductor materials InP/InGaAsP from the molecular dynamics under different temperature conditions, and analyzed the effect of the different doping ratio on the light absorption properties of InxGa1-xAsyP1-y。 The research of this topic provides a method from the theoretical calculations for in search of new fiber-optic sensing materials.

Abstract: In this work, the compatibility of InP and InGaAs in cleaning solutions commonly used in semiconductor manufacturing is investigated. Aqueous oxidizing cleans should be avoided as the substrates dissolve rapidly. Low pH solutions may impose some serious ES&H issues due to hydride evolution occurring upon acidic hydrolysis of the III-V material. However, acidic solutions are very efficient to remove the native oxide from the substrate. Complete oxide free surfaces are not achieved after wet cleaning due to the rapid oxidation of these materials in the atmosphere.

Abstract: We investigated properties of nanolayers electrophoretically deposited (EPD) onto semiconductor indium phosphide (InP) or gallium nitride (GaN) single crystals from colloid solutions of metal palladium (Pd), platinum (Pt) or bimetallic Pd/Pt nanoparticles (NPs) in isooctane. Colloids with metal NPs were prepared by reaction of metal compounds with the reducing agent hydrazine in water confined to reverse micelles of surfactant AOT.. Chopped DC electric voltage was applied for the time period to deposit metal NPs, only partly covering surface of the wafer. The deposits were image-observed by scanning electron microscopy (SEM)..Diodes with porous Schottky contacts were made by printing colloidal graphite on the NPs deposited surface and making ohmic contact on the blank side of the wafer. The diodes showed current-voltage characteristics of excellent rectification ratio and barrier height values close to Schottky-Mott limit, which was an evidence of negligible Fermi level pinning. Large increase of current was observed after switching on a flow of gas blend hydrogen in nitrogen (H₂/N₂). The diodes were measured with various H₂/N₂ in the range from 1000 ppm to 1 ppm of H₂. Current change ratios about 10⁶ and about 10 were achieved with 1000 ppm and 1 ppm H₂/N₂.

Abstract: We report on the fabrication of self-assembled InP ring-shape nanostructures on In0.49Ga0.51P by droplet molecular-beam epitaxy. The dependency of InP ring-shape nanostructural properties on substrate temperature and indium deposition rate is investigated by ex situ atomic force microscope (AFM). The nano-craters are formed when indium deposition at 120°C while the ring shape quantum-dot molecules are formed when indium deposition at 150°C or higher. The size, density and pattern of InP ring-shape nanostructures strongly depend on substrate temperature and indium deposition rate during indium deposition.