Papers by Keyword: Interface

Abstract: The mechanical properties of coir fiber/line low density polyethylene (LLDPE) bio-composites were studied and micrographs of fracture surface of impact specimens for the composites were analyzed by scanning electron microscope (SEM). The flexural and impact strength of the composite with a compatilizer were higher than that of the composite without a compatilizer. The results of interface morphology of the composites with a compatilizer show better interfacial adhesion than that of the composites without one by SEM. That compatibility between the fiber and LLDPE resin is improved on, which is essential reason of rigidity and toughness increase of the composites.

Abstract: The higher order discontinuous asymptotic fields which are similar to the Williams’ solutions of homogenous material are obtained by the displacement method and asymptotic analysis for a plane crack at the physical weak-discontinuous interface in non-homogeneous materials. The results provide a theoretical basis for the numerical analysis, experimental investigation and the engineering application of physical weak-discontinuous fracture.

Abstract: Metal-oxide-semiconductor (MOS) capacitors were formed on 4H-silicon carbide (SiC) using thermally grown silicon dioxide (SiO2) as gate dielectrics, both with and without nitrogen incorporation within the oxide. The field dependence of the charge trapping properties of these structures was analyzed and linked to the observed Fowler-Nordheim current degradation. Furthermore, first considerations were presented that indicate an electron impact emission induced generation of positive oxide trapped charge.

Abstract: SiO2/4H-SiC interfaces are examined by high-resolution transmission electron microscopy (HRTEM), high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), and spatially resolved electron energy-loss spectroscopy (EELS). HRTEM and HAADF-STEM images of SiO2/4H-SiC interfaces reveal that abrupt interfaces are formed irrespective of the fabrication conditions. Transition regions around the interfaces reported by Zheleva et al. were not observed. Using EELS, profiles of the C/Si and O/Si ratios across an interface were measured. Our measurements did not reveal a C-rich region on the SiC side of the interface, which was reported by Zheleva et al.

Abstract: The performance of 4H-SiC power MOSFETs is limited by the less than ideal electron inversion-layer mobility due to the poor quality of the SiC-SiO2 interface. This poor interface causes several undesirable behaviors of the electrical performance of SiC MOSFETs, including: (1) strong shifts in the threshold voltage with temperature, (2) low channel mobility and (3) strong sensitivity of the mobility to the channel doping concentration. These features are explained by a high density of interface states, the high surface electric field induced in SiC inversion layers, and the combined effectsa combination of Coulomb and surface roughness scattering.

Abstract: In this study, beryllium bronze/steel composite plates were fabricated through explosive welding process using different ratios of explosive. Microstructures of the joint were examined, and then shearing strength, peeling strength, Bending tests and hardness measurements were carried out on the bonded specimens. Experimental studies show that, beryllium bronze and steel could be bonded with a good quality. The interface is wavy texture changing in turns from flat - wavelet - large wave - stable large wave beginning with initiation point. Grains near the interface are elongated parallel to the explosion direction. As the ratio of explosive increase, the amplitude and wavelength of wave are increased, which leads to the increasing of shearing strength and bonging strength. No shearing in the interface is seen from the tensile-shear tests and fracture take place in the low strength material. The bended specimens show that defects such as separation and tearing were not observed. Hardness is increased with increasing explosive ratio and the highest hardness values are obtained near the bonding interface.

Abstract: In this work, the electrochemical transient behaviors of tubular steel API-P110 in buffered acidic NaCl solutions saturated with 50% H₂S and different content of CO₂ mixture gases, were investigated by single potential step chronoamperometry. Analysis of the results shows that fewer reactants take part in the reduction reaction when adding CO₂ content from 17% to 50% in 50% H₂S containing solution. Anions desorption process controls the reactant transferring process in metal-solution interface in the solution containing H₂S and CO₂. When at higher overpotential, anions desorption enhances and hydrogen absorption depresses with the increasing CO₂ content in H₂S/CO₂.

Abstract: Since its first launch by Apple Inc in 2007, touch-screen mobile phone has witnessed a rapidly growing number of its users, which calls for new requirements in the interactive design of its interface. This paper probes into the current development of touch-screen mobile phones, analyzes the present situation of the interactive design of its interface and its developing tendency and points out its limitation and deficiency on the basis of that.

Abstract: SiC filament was prepared by Chemical Vapour Deposition method using W wire as the substance material. The combination between W wire and SiC became a key element influencing tensile strength of SiC. In this paper, tensile fracture morphology of SiC filament was analyzed, from which interface combination between SiC and W wire was discussed under different deposition temperature and the influence of interface layer’s thickness on final tensile of SiC filament was given. How to control the thickness of interface layer is a key factor for improving performance of SiC filament.

Abstract: Mechanical properties of the co-continuous SiC/Al composites were simulated using the ANSYS software in this paper, and Kelvin model was adopted as SiC structure. The models of various SiC contents were calculated for composites, the influences of SiC volume fraction on the interface were analyzed. Compared with the particle reinforced composites, the influences of SiC structure on the interface and strength were investigated. The results showed that the SiC volume fraction has a certain effect on the interface of composites, the incoordination of deformation of SiC and Al causes the greater stress concentration with SiC volume fraction decreases, so that interface occurs the debonding. Compared the simulation results of co-continuous composites and particle reinforced composites, two stress-distance curves show that the stress decreases with the distance from the interface increases, and two stress-strain curves prove that the co-continuous composites have higher the yield strength and the deforming resistance.