Papers by Keyword: Ion Etching

Abstract: The evolution of the CVD diamond coatings morphology after perpendicular direction reactive ion etching was investigated. During the surface treatment, the average surface roughness was reduced. The efficiency of the etching decreases with the increasing of the processing time, until the surface roughness has been reduced by 30±5%. The height points spread over the surface were measured. The quality of the obtained films was investigated using the Raman spectroscopy.

Abstract: Graphite growth morphology was studied by using InLense detector on FEG-SEM after performing ion etching on the samples. Star like and circumferential growth mechanism of graphite was observed in the graphite nodules. Pure ternary alloy of hypo eutectic and hyper eutectic composition was treated with pure Mg, Ca and Sr, to study the effect of O and S concentration in the melt, on the transition of graphite morphology from nodular to vermicular/compacted and flake graphite. The change in the melt composition between the austenite dendrites due to micro-segregation of S, O and inoculants and their possible effects on the transition of graphite morphologies as well as the nucleation of new oxides/sulfides particles is discussed with the help of thermodynamics.

Abstract: The etching processes of Si [1 0 0] wafer have been studied using two different methods; namely the wet chemical etching method, using HNO3-HF-CH3COOH solution, and the Ultra Low Frequency Plasma (ULFP) method at (1KHz). Ion etching using inert gas only (e.g., argon gas), and ion chemical etching using an active gas (beside the inert gas) such as oxygen techniques were used. Calculations of the different parameters produced by chemical etching and plasma etching for silicon wafer (sample) such as ( hole depth, hole width and etching rate) were investigated using the images of Optical Scanning microscope (OSM) and Joel Scanning microscope (JSM). The formed hole width (ω) increases by increasing the exposure time of the sample in the different types of etching. Values of the hole width were in the range of 2- 7 µm during exposure times of (30 to 100 min). The sample growth exponent constant was about ( 0.0707 and 0.0537 µm/min ) .Hole has depths in the range of( 0.5 to 3 µm) in time of (30 to 100 min).The average distances between the holes were decreased by increasing the exposure time from (14 to 4 µm) in the time range of (30 – 100 min). The rates of etching were ranged from (0.0226 to 0.0448 µm/ min) either for dry or wet etching. Normal 0 21 false false false MS X-NONE X-NONE The etching processes of Si [1 0 0] wafer have been studied using two different methods; namely wet chemical etching method, using HNO₃-HF-CH₃COOH solution, and Ultra Low Frequency Plasma (ULFP) method at (1KHz). Ion etching used inert gas only (e.g., argon gas) while ion chemical etching used an active gas (beside the inert gas) such as oxygen techniques were used. Calculations of the different parameters produced by chemical etching and plasma etching for silicon wafer (sample) such as ( hole depth, hole width and etching rate) were investigated using the images of Optical Scanning Microscope (OSM) and Joel Scanning Microscope (JSM). The formed hole width (ω) increased by increasing the exposure time of the sample in the different types of etching. Values of the hole width were in the range of 2- 7 µm during exposure times of (30 to 100 min). The sample growth exponent constant was about (0.0707 and 0.0537 µm/ min). Hole has depths in the range of( 0.5 to 3 µm) in time of (30 to 100 min).The average distances between the holes were decreased by increasing the exposure time from (14 to 4 µm) in the time range of (30 – 100 min). The rates of etching were ranged from (0.0226 to 0.0448 µm/ min) either for dry or wet etching. /* Style Definitions */ table.MsoNormalTable {mso-style-name:"Table Normal"; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-priority:99; mso-style-qformat:yes; mso-style-parent:""; mso-padding-alt:0cm 5.4pt 0cm 5.4pt; mso-para-margin:0cm; mso-para-margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:11.0pt; font-family:"Calibri","sans-serif"; mso-ascii-font-family:Calibri; mso-ascii-theme-font:minor-latin; mso-fareast-font-family:"Times New Roman"; mso-fareast-theme-font:minor-fareast; mso-hansi-font-family:Calibri; mso-hansi-theme-font:minor-latin; mso-bidi-font-family:"Times New Roman"; mso-bidi-theme-font:minor-bidi;}