Papers by Keyword: Ion Irradiation

Abstract: TiNi is well known as a typical shape-memory alloy, and is expected to be a promising material for micro actuators. In order to realize micro electro mechanical systems (MEMS) with this material, we have to get thin crystal film of the material, since the shape-memory property appears only when the structure is crystalline. In our previous studies we developed a new apparatus as well as a new deposition process for lowering the crystallization temperature by using ion irradiation. In addition, we have found that the deposited film by the process can be crystallized at very low temperature (below 473 K) without annealing but with simultaneous irradiation of Ar ions during sputter-deposition. In this study, we aim for the realization of crystallized TiNi film, which is deposited on Si substrate below 373 K substrate temperature. In order to realization the purpose, we have revealed the effect of Ar ion energy on lowering the crystallization temperature. The ion energy is measured with a quadrupole mass spectrometer (QMS) having an ion energy analyzer. The deposited TiNi films are examined with an X-ray diffraction (XRD). We found the plasma potential against the reactor chamber is important to be considered in the ion irradiation energy. The effects of ion energy for the crystallization of TiNi film are discussed.

Abstract: We recently synthesized different composition polycrystalline Ho2+xTi2-xO7-x/2 (x=0, 0.4 and 0.67), which is derivative fluorite compounds known as and pyrochlore phases in Ho3O2-TiO2 phase diagram by using conventional solid state synthesis methods. The samples were irradiated with 400 keV Ne2+ ions at cryogenic temperature (~77 K), using the Danfysik ion accelerator at the Ion Beam Materials Laboratory (IBML) of Los Alamos National Laboratory (LANL). The irradiation fluences in the experiments ranged from 5×10¹⁴-5×10¹⁵ ions/cm². An order-to-disorder (O-D) transformation was observed for α, β and pyrochlore phases, as determined using grazing incidence X-ray diffraction (GIXRD) at an incident angle of 0.25°. The O-D transformation threshold fluence for α phase was found to be noticeably lower than those for β phase and pyrochlore, and the O-D transformation threshold fluence for β phase was the highest. The O-D transformation threshold fluence was found to be coherent with the phase transformation temperature in the Ho₃O₂-TiO₂ temperature-composition (T-C) phase diagram.

Abstract: Bulk metallic glasses (BMGs) are well known for their promising properties. Surface properties can be further improved by using certain techniques such as electron beam melting (EBM), laser beam melting (LBM), ion irradiation, ion implantation and neutron irradiation. BMGs especially Zr-based BMGs have numerous applications as structural materials. In this manuscript, the results are presented on microstructural investigations and phase formations in Zr-based BMGs modified by using above mentioned techniques. Microstructure was studied by scanning electron microscopy (SEM). Phase analysis was done by X-ray diffraction (XRD) and confirmed by energy dispersive spectroscopy (EDS). Vickers hardness was measured and correlated with the microstructure. The phases identified in Zr-Cu-Al-Ni alloy samples modified by EBM, LBM and ion irradiation are Ni-Zr, NiZr₂, CuZr₂, Cu₁₀Zr₇ and Al₂NiZr₆. ZrSi₂ phase was detected in Zr₅₅Cu₃₀Al₁₀Ni₅ and Zr₆₅Cu₁₇Ni₁₀Al₈ BMGs irradiated with Si⁺ (ions). About 20-35 % increase in hardness and elastic moduli was achieved by surface modification. Modifications of BMGs by electron and laser beams melted the materials surfaces while ion irradiation improved the mechanical properties of localized zones without melting.

Abstract: Si and Ge ions are implanted into SiO₂ thin films, subsequently the annealing treatment are carried out. The samples exhibit photoluminescence (PL) peaks at 400, 470, 550 and 780 nm. With the annealing temperature increasing, the intensity of 400-470 nm PL band increases remarkably. After oxidation annealing treatment, the intensity of 400-470 nm PL band decreases, and that of 550 nm and 780 nm PL peaks rises. Combing with the results of X-ray photoelectron spectroscopy(XPS), X-ray diffraction (XRD) and PL measurement, we propose that the PL peaks at 400 nm, 470 nm, 550 nm and 780 nm originate from ≡Ge−Si≡ center, ≡Si−Si≡ center, SPR center and GeO center, respectively.

Abstract: The diffusion trapping model has been applied to slow positron annihilation in He+ irradiated polystyrene and polystyrene – polystyrene bilayers. The S-parameter and the positron lifetime have been calculated as a function of the incident positron energy. The effect of the fluence upon the nature of the S-parameter curve has been discussed. It has been found that a change in fluence affects positronium formation. The transition rate for surface to positronium formation has been found to be dependent upon the fluence and the atomic number of the irradiated ion. The lifetime results show that, at low energy, the o-Ps annihilates mainly at the polymeric surface. The free volume hole concentration is found to decrease at low energy, and becomes constant at higher energies.

Abstract: Thin film samples of multi-walled carbon nanotubes (MWCNTs) were irradiated with 120 MeV gold ions. Transmission electron microscopy (TEM) images of the pristine and irradiated samples were obtained. TEM pictures show that in the irradiated sample, the CNTs are in general shorter and some have their inner cores filled, unlike in the pristine sample. We also find from these images that average inner and outer tube diameters change as a result of ion irradiation. The films were also characterized using Raman spectrometry. Modifications of the disorder mode (D mode) and the tangential mode (G mode) under different irradiation fluences were studied in detail. As fluence increases, the MWCNTs first show damage, then healing under somewhat higher fluences and again amorphization under still higher fluence of ion irradiation.

Abstract: Irradiation with high energy (500 keV) C+ ions at fluences from 11013 to 11014 cm-2 was used to introduce controlled amounts of defects in single layers of graphene deposited on a SiO2(100 nm)/n+Si substrate. Scanning Capacitance Spectroscopy (SCS) was used as non-destructive characterization technique to probe the effect of irradiation on the electrical properties of graphene. In particular, a comparative study between the local capacitance of pristine graphene and irradiated graphene is presented, showing that lateral variations in irradiated graphene are distinctly higher. The local quantum capacitance per unit area C’q of graphene was extracted from raw data. While a narrow distribution of C’q values was obtained in pristine graphene, two distinct distributions were obtained in irradiated monolayers, associated to locally damaged and not damaged regions, respectively.

Abstract: Spherical submicrometer-sized silica particles were prepared from a reaction mixture containing tetraethoxysilane, ammonia and ethanol, and deposited onto silicon wafers. The properties of these SiO2 particles depend on their size, size distribution and shape. Even if some of these characteristics can be perfectly controlled by appropriate synthesis conditions, several alternative approaches must be explored in order to modify the shape of silica particles. The samples were then irradiated at room temperature with Si ions at different energies (4, 6 and 8 MeV) and fluences up to 5×1015 Si/cm2, at an angle of 45° with respect to the sample surface. After the Si irradiation the spherical silica particles turned into ellipsoidal particles, as a result of the increase of the particle dimension perpendicular to the ion beam and a decrease in the parallel direction. This effect increases with the ion fluence and depends on the electronic energy loss of the impinging ions. We observed that the particle deformation decreases with the beam energy, mainly because our samples were irradiated at room temperature. Thermal effects must be studied in detail in order to elucidate the complete deformation mechanism, as the existence of additional mechanisms related to the electronic energy loss effects can not be excluded.

Abstract: In order to fabricate two-dimensional micro actuators with shape memory alloy films, it is especially important to evaluate the anisotropy of transformation strain that is caused by texture. In this paper, microstructures of sputter-deposited TiNi films are examined. The films of 1 μm in thickness are sputter-deposited on Si(001) substrates by RF magnetron multi-sputtering system equipped with four separate confocal sources as well as with substrate heating. Pure Ti and Ni targets of 50 mm in diameter are used for the sources. The films deposited at ambient temperature have been generally amorphous. However, we find that some films which are deposited at 773K of substrate temperature are crystalline, when we appropriately choose sputtering parameters such as source voltage and the distance between a target and the substrate. X-ray powder diffraction and pole figure measurements reveal that these films are oriented with {110}B2 parallel or inclined at 45 degree to the substrate. Furthermore, we also find that crystallized film is deposited even at 673K of substrate temperature by applying pulse bias voltage to the substrate.

Abstract: This article summarizes briefly our recent research on low-temperature synthesis of TiN, TiN/Cu and TiN/Si films by using inductively coupled plasma assisted magnetron sputtering method. It is shown that the incorporation of high-flux low-energy ion irradiation during deposition strongly affects film growth, structure evolution, morphology and mechanical properties. A main attention is devoted to the synthesis of superhard nanocomposite films at a low deposition temperature. In both TiN/Cu and TiN/Si films the maximum hardness reaches a value higher than 40 GPa.