Papers by Keyword: Low Leakage Current

Abstract: High Curie-temperature (T_c) polycrystalline 0.2Bi (Ni_1/2Ti_1/2)O₃-0.8PbTiO₃ (0.2BNT-0.8PT) thin films were fabricated on Pt (111)/Ti/SiO₂/Si substrates via an aqueous chemical solution deposition (CSD) technique. The thin films exhibited good crystalline quality and dense, uniform microstructures with an average grain size of 55 nm. The dielectric, piezoelectric and ferroelectric properties of the films was investigated. The permittivity peak appeared at 485 °C, which was 100 °C higher than that of Pb (Zr,Ti)O₃ thin films. The local effective piezoelectric coefficient d₃₃ was 45 pm/V at 3V. Moreover, a large remnant polarization with 2P_r up to 92 uC/cm² and a small leakage current of 2.2×10^-5 A/cm² under an electric field of 400 kV/cm were obtained. The magnitude of the measured polarization and the high Curie temperature make the 0.2BNT-0.8PT films promising candidates for application in high-temperature ferroelectric and piezoelectric devices.

Abstract: Simulation results illustrate that there is an optimum-energy supply voltage point (Vopt) for SoC. And these voltage points normally lie in weak sub-threshold or near-threshold region. Considering about the degraded robustness under this low supply voltage, structural change instead of the sizing change is considered in proposed design. Different from conventional 6T SRAM design, the trip point voltage of proposed design changes according to bit-line voltage values. In this way, its read margin is 45% greater than conventional 6T SRAM. The proposed bit-cell exhibits wide hysteresis effect, making the design less vulnerable to process variation. Its hold margin is 30.2% greater than conventional 6T SRAM. The optimum-energy supply voltage of proposed array (256×16) is 400 mV. At the same time, the power consumption at 400 mV decreases to 16% compared to that at 1200 mV.

Abstract: 4H-SiC SBDs have been developed by many researchers and commercialized for power application devices in recent years. At present time, the issues of an SiC-SBD are lower on-state current and a relatively larger-leakage current at the reverse bias than Si-PN diodes. A JBS (Junction Barrier Schottky) diode was proposed as a structure to realize a lower leakage current. We simulated the electrical characteristics of JBS diodes, where the Schottky electrode was made of molybdenum in order to optimize its performance. We fabricated JBS diodes based on the simulation with a diameter of 3.9mm (11.9 mm2). The JBS diode has a lower threshold voltage of 0.45 V, a large forward current of 40 A at Vf = 2.5V and a high breakdown voltage of 1660 V. Furthermore, the leakage current at 1200 V was remarkably low (Ir = 20 nA).