Papers by Keyword: MISFET

Abstract: This paper demonstrates ion implanted lateral GaN MISFETs using double ion implantation technology, which enables us to form Si ion implanted source/drain regions in Mg ion implanted p-well fabricated on free-standing GaN substrates. Maximum drain current of 39 mA/mm and maximum transconductance of 4.5 mS/mm for GaN MISFET with a gate length of 2 μm at an estimated Mg surface concentration of 2.2 × 10¹⁸ cm^-3 were obtained. A threshold voltage was-0.5 V for the device. These results show that we successfully formed Si ion implanted n-type regions in the Mg ion-implanted layer and achieved innovative performance.

Abstract: Gas sensitive silicon carbide field effect transistors with nanostructured Ir gate layers have been used for the first time for sensitive detection of volatile organic compounds (VOCs) at part per billion level for indoor air quality applications. Formaldehyde, naphthalene, and benzene have been used as typical VOCs in dry air and under 10% and 20% relative humidity. A single VOC was used at a time to study long-term stability, repeatability, temperature dependence, effect of relative humidity, sensitivity, response and recovery times of the sensors.