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Articles by keyword: «Multi-Wafer CVD»

• Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes
  Published in: Silicon Carbide and Related Materials 2007 (p95)
• Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs
  Published in: Silicon Carbide and Related Materials 2005 (p135)
• Epitaxial Growth of n-Type 4H-SiC on 3" Wafers for Power Devices
  Published in: Silicon Carbide and Related Materials 2004 (p141)
• Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with V_BR > 4 kV
  Published in: Silicon Carbide and Related Materials 2008 (p77)