Authors: Sausan Al-Riyami, Tsuyoshi Yoshitake
Abstract: Nitrogenated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films were prepared in hydrogen and nitrogen mixed-gas atmospheres by pulsed laser deposition using graphite targets. The electrical conductivity in n-type conduction remarkably increase at room temperature with an increase in the nitrogen content. In the nitrogen content range from 7.9 to 10.4 at.%, the electrical conductivity is dramatically decreased and this accompanied by the disappearance of diamond grains in the films. Grain boundaries owing to the existence of diamond grains embedded in UNCD/a-C:H films, which is structural specific to UNCD/a-C:H, should play a significant role in the large electrical conductivity enhancement by nitrogen doping. The X-ray photoemission and near-edge X-ray fine-absorption spectroscopic measurements could not detect an evident difference in the spectra that explain the sudden irregular change in the electrical conductivity
274
Authors: Boris Senkovskiy, Dmitry Usachov, Alla Chikina, Pavel Ulyanov, Alexander Shelyakov, Vera K. Adamchuk
Abstract: The electronic energy structure of Ti-Ni and TiNi-Cu alloys has been studied experimentally by XPS and NEXAFS and theoretically by the full-potential local-orbital minimum-basis code. The study has revealed formation in the valence band of the Ti50Ni50 alloy of a common d-band through hybridization of the d-states of Ti with those of Ni, which is localized within a narrow binding-energy interval. This brings about an intra-atomic redistribution of Ti electron density in the Ti50Ni50 alloy compared to the pure metal: decrease of the occupancy of the Ti d-shell is countered by an increase in the number of Ti p-electrons. The occupancy of the Ti d-shell in the TiNi-Cu alloys, where Ni atoms are partially substituted by Cu, and in the Ti-Ni alloys with an excess of the Ni is more than in the equiatomic Ti50Ni50 alloy. The occupancy of the Ni and Cu d-shells in the Ti-Ni and TiNi-Cu alloys is independent of the atomic composition. The Ti d-shell sensitivity to variation of the nearest atomic environment is apparently due to their relatively itinerant behavior in the studied alloys. The results obtained suggest that the increase of the stiffness of an interatomic bond in the TiNi-Cu alloys with increasing Cu content and in the Ti-Ni alloys with increasing Ni content is possibly associated with the filling of Ti bonding d-states.
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Authors: Fani Pinakidou, M. Katsikini, Panos Patsalas, Gregory Abadias, E.C. Paloura
Abstract: The effect of chemical composition on the bonding environment of Cu, in a series of Ti1-x Cux and TiN/Cu films, is studied using X-Ray Absorption Spectroscopies (XAFS) at the Cu-K-edge. The EXAFS analysis reveals that in all studied samples Cu is amorphous. However, its bonding environment depends on the chemical composition. More specifically, in the Ti1-xCux films, Cu is coordinated with Ti and Cu and belongs both to intermetallic TiCu and to an amorphous Cu matrix. The coordination number of Cu, i.e., the sum of Ti and Cu first neighbours, increases systematically from 6.3 ± 0.7 to 10.6 ± 0.9 when the Cu content increases from 24.1 to 52.7 at%. On the contrary, in the TiN/Cu films, the type of atoms that consists the 1st nearest neighbour shell of Cu varies as a function of the Cu concentration. More specifically, in the TiN/Cu film with the lowest Cu content (27.3 at%), intermetallic TiCu is detected. At intermediate Cu concentration (37.8 at%), Cu is bonded to both Ti and Cu atoms. Finally, in the TiN/Cu film with the highest Cu content (67.7 at%), Cu is metallic.
43
Authors: Martin Lommel, Philipp Hönicke, Michael Kolbe, Matthias Müller, Falk Reinhardt, Pit Möbus, Eric Mankel, Burkhard Beckhoff, Bernd O. Kolbesen
Abstract: The formation of self-assembled monolayers (SAMs) by specific organic molecules with appropriate anchor groups on semiconductor surfaces may be used to probe the chemical state and quality of the surface or to achieve surface passivation. Molecules with thiol anchor groups are able to bond to hydrogen-terminated germanium surfaces (Ge-S bond). We have prepared SAMs of alkylthiols with different head groups on germanium. Since the surface preparation of germanium is neither well understood nor developed, the controlled preparation of an oxide-free completely H-terminated surface which is a prerequisite for SAM formation of alkylthiols turned out to be a major challenge. Several approaches have been studied. The characterization of the germanium surface prior to and after SAMs formation has been performed by AFM, XPS, Synchrotron-TXRF and -NEXAFS.
169
Authors: Thierry Conard, Scott List, Martine Claes, Burkhard Beckhoff
281
Authors: Burkhard Beckhoff, R. Fliegauf, Michael Kolbe, M. Müller, B. Pollakowski, J. Weser, Gerhard Ulm
277
Authors: Teruyasu Mizoguchi, Masaki Sakurai, Atsutomo Nakamura, Takeo Sasaki, Yukio Sato, Katsuyuki Matsunaga, Takahisa Yamamoto, Yuichi Ikuhara
Abstract: Near-edge structure of X-ray absorption spectrum (NEXAFS) of various Ti-oxides were investigated by combined with first principles orthogonalized linear combinations of atomic orbitals (OLCAO) method. From experimental and theoretical studies on the NEXAFS of the tetravalent and trivalent Ti-oxides, including rutile, anatase, brookite, columbite, and Ti2O3, it was found that
the valence state of Ti can be identified by regarding the positions of the spectral onset and the shoulder in the main-peak of Ti-K NEXAFS.
3119
Authors: Burkhard Beckhoff, R. Fliegauf, Gerhard Ulm, J. Weser, G. Pepponi, C. Streli, P. Wobrauschek, T. Ehmann, L. Fabry, S. Pahlke, B. Kanngießer, W. Malzer
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