Papers by Keyword: Native Oxide

Abstract: Native oxide layer with thickness of about 1 nm was found easy to form on 6H-SiC surface during transporting from cleaning process to vacuum chambers, which was examined by x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). The interface band bending was studied by synchrotron radiation photoelectron spectroscopy (SRPES). For the native-oxide/SiC surface, after Ni deposition, the binding energy of Si 2p red-shifted about 0.34 eV, which suggested the upward bending of the interface energy band. Therefore, the native oxide layer should be considered on the study of SiC devices because it may affect the electron transport properties significantly.

Abstract: Silicon nanowires (SiNWs) based solar cells are passivated by native oxide and SiN_x bi-layer. In comparison with cells passivated by SiN_x single layer, bi-layer passivation exhibits higher effective minority lifetime, illustrating a better surface passivation effect, which leads to a gain of internal quantum efficiency in the short wavelength range, a better output performance with an increase of 0.16% in efficiency. The data obtained from this work is fundamental and has some reference value for future studies.

Abstract: In this paper, a simulation model is proposed to describe CH₄ adsorption-induced curvature of a nanocantilever, based on the energy transfer between potential energy of adsorbates and elastic energy of the bending cantilever. For most cantilever sensors, the basic structure is a silicon beam coated with a metal layer on the top, and aluminum is chosen here. Because the native oxide is usually formed during the fabrication of silicon beams, we have to describe the effect of native oxide on the elastic modulus of the silicon nanobeam in this model based on the semi-continuum method. This model gives a way to predict the curvature of the composite cantilever with native oxide when adsorbing a single layer of CH₄ molecules.

Abstract: The near-SiC-interfaces of annealed Ni/SiC contacts were observed directly by high-resolution transmission electron microscopy (HRTEM). 1 nm native oxide layer was observed in the as-deposited contact interface. The native oxide layer cannot be removed at 650°C through rapid thermal annealing (RTA) and it was completely removed at 1000°C RTA. The residue of native oxide layer resulted in the Schottky characters. High temperature annealing (>950°C) not only removes the oxide layer in the near-SiC-interface, but also forms a well arranged flat Ni2Si/SiC interface, which contribute to the formation of ohmic behavior.

Abstract: The process in which anhydrous HF (AHF) is mixed with the vapor of an organic solvent for the purpose of etching of native SiO2 on Si surfaces is well established (e.g [1-4]). The process was also explored as part of a dry-wet wafer cleaning sequence [5]. More recently, the same process has been successfully expanded into MEMS technology for the purpose of stiction-free releasing of structures by isotropic etching of sacrificial SiO2 [6,7]. The current strong push in advanced Si digital IC technology toward extremely fragile 3D geometries engraved on Si wafer surfaces, in which case conventional etch methods may not work properly [8], as well as needs with regard to native oxide etching in emerging Si-based technologies such as solar cell manufacturing has brought about renewed interest in AHF technology.