Papers by Keyword: Oi

Abstract: The passive optical network (PON) is widely used in different kinds of fields in modern society. Among the PON technologies, Wavelength-division-multiplexed Passive Optical Network (WDM-PON), which has much higher bandwidth, is the important future direction of the optical fiber access. The Single-stage WDM-PON is commonly used from Central Office (CO) to concentrated user groups in a specific area, and the applied field is limited. In this paper, a new network structure and the key technologies of WDM-PON have been studied to increase the access range and number of users, reduce costs and accelerate the realistic applications of WDM-PON technology, which has expensive devices and equipment.

Abstract: The content of interstitially solved oxygen (Oi) in heavily boron doped silicon (9- 29 m
cm) were measured by low temperature Fourier transform infrared (FTIR) spectroscopy. Therefor an alternative thinning technique for silicon is used: by alkaline potassium hydroxide etching (KOH) prepolished silicon specimens are thinned down to 8 - 60 microns. The optimal end thickness depends on the boron concentration which specifies the free carrier concentration. Specimens with three different boron concentrations (9/19/29 m
cm) were examined. The results are compared with gas fusion analysis (GFA) measurements. Furthermore the precipitated oxygen Oi was measured for a RTA process (20s@1250°C) with subsequent growth steps (4h@780°C + 16h@1000°C).