Papers by Keyword: Passivation

Abstract: Sterilization of the NiTi alloy in boiling water or steam causes passivation, which results in an amorphous 3.5 nm thick TiO2 layer on the surface. Between the surface and the matrix a transition layer of Ni2O3 and NiO was observed, using the X-ray photoelectron spectroscopy. Differences in sterilization conditions affect the amount of metallic nickel on the surface.

Abstract: In this study, a comparison of appearance surface and fracture surface of mechanical plating was made, respectively formed by spherical Zn powders and Zn-Al compounding flake powders. It is found that the spherical particles are deposited and embedded on Zn plating. The deformation of granular Zn powders on coating superficial is relatively large, but there is little distortion of globe grain inside the coating, mainly with spheroidicity distorted. Besides, there are obvious gaps between the particles in Zn coating. In contrast, the flake structure granules of Zn-Al plating are densely and compactly laid out with small space. After contacting with air, the plating coat expands owing to aluminum oxidation, leading to the higher position of the plating coat on the cross section than the matrix metal. We then did salt mist test to verify the corrosion resistance of Zn-Al compounding flake coating. It was found that the Zn-Al compounding flake coating was superior to that formed by globe Zn powder. Results show that the addition of layers of flakes has a better shielding action resisting corrosive medium, leading to the decrease of the osmosis from corrosive medium to the coatings. And the coating can repair naturally after being damaged. We further passivate plating with molybdate to improve the anticorrosion of the coating.

Abstract: The effect of different microbial consortia on the leaching of chalcopyrite was studied at different temperatures and solution compositions with Boliden’s Aitik ore in column reactors simulating heap bioleaching. The columns were equipped with sampling chambers and chalcopyrite mineral electrodes in order to investigate the passivation of chalcopyrite. The sampling chambers were filled with agglomerated ore and pieces of chalcopyrite-rich ore. In addition to chemical analysis of the leaching solution and solids the progress of leaching of chalcopyrite was studied by continuous potential measurements with chalcopyrite electrodes. The occurrence and composition of potentially passivating layers on the surfaces of the electrodes and the samples taken from sample chambers were examined by optical and scanning electron microscopy.

Abstract: A polyimide (PI) has been used for the passivation of maximum 7.8 kV 4H-SiC P+N–N+ (PiN) diodes with a 60 µm-thick base epilayer and a junction termination extension (JTE) periphery protection. The dielectric strength of PI films is studied versus area and temperature. The reverse electrical characterization of the PI–passivated PiN diodes is presented for different natures of the environmental atmosphere. The results are compared to those obtained from same devices passivated with a deposited SiO2 thick film. The highest experimental breakdown voltages are obtained for PI–passivated PiN diodes immersed in PFPE oil, with a 5-6 kV typical value, and a 7.3 kV maximum value. Experimental observations are discussed in correlation with the insulating film properties.

Abstract: . Experimental results relating to evolution of the a-Si:H photoluminescence spectra are presented. The investigated samples were prepared by deposition of thin a-Si:H layer on glass substrate. In the a-Si:H surface region very thin oxide layer was prepared by wet chemical oxidation in 40% nitric acid solution. The defect states of amorphous silicon layer and its interface with oxide were passivated in HCN aqueous solutions. The attention was focused on decomposition procedure of photoluminescence spectra observed at 6 K. The results confirm the existence of several structurally different phases inside of the a-Si:H amorphous matrix. PACS: 78.55.-m, 78.55.Qr, 81.05.Gc

Abstract: Iminodiacetic acid (IMDA), NH(CH2CO2H)2, whose molecular structure is shown in figure 1, is a small molecule but has a very large scope for interacting with copper due to its two carboxylic acid and imine functionalities, which have been shown to bind strongly to copper [1,2,3]. The electronegative oxygen and nitrogen atoms present also make this a good candidate for hydrogen bonding, which often leads to very stable ordered two dimensional (2D) structures being formed across surfaces.

Abstract: The formation of self-assembled monolayers (SAMs) by specific organic molecules with appropriate anchor groups on semiconductor surfaces may be used to probe the chemical state and quality of the surface or to achieve surface passivation. Molecules with thiol anchor groups are able to bond to hydrogen-terminated germanium surfaces (Ge-S bond). We have prepared SAMs of alkylthiols with different head groups on germanium. Since the surface preparation of germanium is neither well understood nor developed, the controlled preparation of an oxide-free completely H-terminated surface which is a prerequisite for SAM formation of alkylthiols turned out to be a major challenge. Several approaches have been studied. The characterization of the germanium surface prior to and after SAMs formation has been performed by AFM, XPS, Synchrotron-TXRF and -NEXAFS.

Abstract: Silicon Carbide MESFETs for microwave frequencies were made using a field-plated buried gate approach. The devices were fabricated using passivation oxides with different interface trap densities. By using a passivation oxide with a reduced interface trap density, grown in a sodium containing ambient, it was possible to achieve a very high continous wave output power density of the device: 8 W/mm at 3 GHz and 1 dB compression.

Abstract: Aluminium oxynitride (AlON) films of variable composition were grown by reactive sputter deposition in a N2/O2 ambient at room temperature and studied for device passivation. The films were deposited on Si and 4H-SiC substrates as well as on SiC PiN diodes. The AlON/SiO2/SiC stack provided superior interface properties compared to the AlON/SiC structure. Samples with 8% oxygen content, in the AlON film, and subjected to a UV exposure prior to deposition, exhibited the smallest net positive interface charge. A large net negative interface charge was observed for samples with 10% oxygen content and for the samples with 8% oxygen content and subjected to a RCA1 surface clean, prior to deposition. Diodes passivated with AlON films demonstrated reduced leakage current compared to as-processed diodes.

Abstract: In order to improve corrosion resistance of galvanized steel, a novel cerium-phytic acid passivation treatment was studied. The process of cerium-phytic acid passivation on galvanized steel was optimized. The corrosion resistance of cerium-phytic passivated samples was tested by dropping test and weight loss test. The electrochemical behaviors of cerium, phytic acid and cerium-phytic acid passivated samples in 0.5 mol/L NaCl solution were investigated by polarization curve and AC impendence spectroscopy, respectively. The corrosion equivalent circuit established according to impedance characteristics. The corrosion current density of the samples were treated by cerium and phytic acid was 8.52 × 10-5 A/cm2 and 9.39 × 10-5 A/cm2, respectively, However, the samples were passivated by cerium-phytic acid the corrosion current density decreased to 1.76 × 10-5 A/cm2, respectively. The test results showed that cerium-phytic acid passivated samples exhibited better corrosion resistance than that of cerium or phytic acid passivated sample under the same test conditions.