Papers by Keyword: QFN Packaging

Abstract: In the last decade, failure of microelectronic devices has become a prominent field of research all across the world. The results of this of failure analysis allow an engineer to choose package geometries and materials which reduce the risk of failure. This paper is meant to relate the stress effect on material properties during Quad Flat No-Leads (QFN) stacked-die packages manufacturing processes. To achieve the study, the finite element technique was used to perform an extensive structural analysis on a QFN package design once it was verified by related experiments. A QFN unit was developed in three dimensional geometry with various materials be will simulated in order to determine the location of failure. The induced stress results were also measured in the maximum value, indicating the low modulus and coefficient of thermal expansion (CTE) in the packaging material were important for reducing high stress during the manufacturing stages. However, numerical simulation demonstrated that the stress developments increased exponentially when the die attach temperature increased. Therefore, the induced stress can be relieved by having high die attach process temperature with an adequate bonding force and time. It was vital to control the induced stress in package materials during die attachment process for ensuring the reliability level of QFN packages.

Abstract: This paper discusses the effect of two similar gold wire (wire A and wire B) used mainly as a wire bonding material for Quad Flat Nolead (QFN) package. Both wires with diameter of 25.4 μm were bonded using automatic wire bonder by maintaining the temperature at 200°C. The effect of trace elements on the mechanical properties of 4N gold wire has not been widely investigated for some years despite the important of wire-bonding and the move towards fine pitch applications. Due to the element analysis, atomic percentage of Ca in wire B is higher than wire A. Pull strength increase with the increasing of the trace element. The higher pull strength of wire B could improve the yield strength, elastic modulus and recrytallization temperature.